Excitation power-independent photoluminescence of inverted quantum hut structures embedded in SiGe superlattice (original) (raw)

Anomalous x-ray scattering study of the growth of inverted quantum hut structures in a Si-Ge superlattice emitting strong photoluminescence

Biswarup Satpati

View PDFchevron_right

Structural and Luminescence Properties of SiGe Nanostructures with Ge Quantum Dots

Nima Refahati

Research Journal of Environmental and Earth Sciences, 2014

View PDFchevron_right

Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si[sub 0.7]Ge[sub 0.3] buffer layer

Zhenyang Zhong

Applied Physics Letters, 2008

View PDFchevron_right

Rapid Research Note Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 µm

Alexander Tonkikh

2003

View PDFchevron_right

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Thomas Elsaesser

Nanoscale Research Letters, 2006

View PDFchevron_right

The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots

Alexander Tonkikh

Semiconductors, 2006

View PDFchevron_right

Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures

Junjie Si

1998

View PDFchevron_right

Room-temperature light emission from a highly strained Si/Ge superlattice

Alexander Tonkikh

Applied Physics Letters, 2003

View PDFchevron_right

Temperature and excitation power dependencies of the photoluminescence of planar and vertically self-organized Si0.70Ge0.30/Si strained superlattices

Georges Bremond

Thin Solid Films, 2000

View PDFchevron_right

Local excitons in silicon induced by SiGe quantum huts

Kalobaran Maiti

arXiv: Mesoscale and Nanoscale Physics, 2018

View PDFchevron_right

Photoluminescence excitation spectroscopy of self-assembled SiGe/Si quantum dots

Wei-Xin Ni

2009

View PDFchevron_right

Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

F. Aniel

Applied Physics Letters, 2000

View PDFchevron_right

Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers

H. Von Känel

Applied Physics Letters, 2011

View PDFchevron_right

The studies of Ge quantum dots on strained Si 0.7Ge 0.3 layer by photoluminescence and deep level transient spectroscopy

Zhensheng Tao

Applied Surface Science, 2009

View PDFchevron_right

Above-room-temperature photoluminescence from a strain-compensated Ge/Si< inf> 0.15 Ge< inf> 0.85 multiple-quantum-well structure

Dumitru Dumcenco

Applied Physics Letters, 2012

View PDFchevron_right

Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects

David Lockwood

Proceedings of the IEEE, 2000

View PDFchevron_right

Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission

Leonid Tsybeskov

Frontiers in Materials, 2016

View PDFchevron_right

Photoluminescence processes in Si_ {m} Ge_ {n} superlattices

Subhasis Ghosh

Physical Review B, 2000

View PDFchevron_right

Si/Ge nanostructures for optoelectronics applications

Alexander Tonkikh

Physics of the Solid State, 2004

View PDFchevron_right

Photo- and electroluminescence in short-period Si/Ge superlattice structures

Erich Kasper

Semiconductor Science and Technology, 1994

View PDFchevron_right

The lateral photoconductivity of Si/Ge structures with quantum dots

Andrii Nikolenko

Semiconductor Science and Technology, 2006

View PDFchevron_right

Infrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layer

Andrew Yakimov

Semiconductor Science and Technology, 2011

View PDFchevron_right

Germanium Self-Assembled Quantum Dots in Silicon for Nano- and Optoelectronics

Andrew Yakimov

Journal of Nanoelectronics and Optoelectronics

View PDFchevron_right

Influence of growth conditions on the formation of deep photoluminescence bands in MBE-grown Si layers and SiGe/Si quantum structures

Wei-Xin Ni

Applied Surface Science, 1996

View PDFchevron_right

Hole trapping in self-assembled SiGe quantum nanostructures

Anthony Peaker

Materials Science and Engineering: B, 2003

View PDFchevron_right

Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Si heterostructures

Didier Dutartre

Journal of Applied Physics, 1995

View PDFchevron_right

Visible photoluminescence from nanocrystalline Ge grown at room temperature by photo-oxidation of SiGe using a 126 nm lamp

Ian Boyd

2003

View PDFchevron_right

Lateral photoconductivity in structures with Ge/Si quantum dots

Alexander Tonkikh

Semiconductors, 2013

View PDFchevron_right

Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate

Dr. S Bose

View PDFchevron_right

Formation and properties of selectively grown Ge/Si quantum dots

M. Halbwax

Superlattices and Microstructures, 2004

View PDFchevron_right

Optical absorption spectroscopy of SiGe alloys and superlattices

Hariton Polatoglou

Physical Review B, 1996

View PDFchevron_right

Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots

Andrii Nikolenko

Semiconductors, 2007

View PDFchevron_right

Electronic and optical properties of Ge-Si superlattices

Thomas Pearsall

Progress in Quantum Electronics, 1994

View PDFchevron_right

Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

tomas Rodriguez

Materials Science and Engineering: B, 2008

View PDFchevron_right

Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots

Andrii Nikolenko

Nanotechnology, 2008

View PDFchevron_right