Growth of dilute nitrides and 1.3 µm edge emitting lasers on GaAs by MBE (original) (raw)

Recent advances in the growth of dilute nitrides and 1.3 µm GaInNAs edge emitting lasers on GaAs using molecular beam epitaxy (MBE) at Chalmers University of Technology are presented. A significant enhancement in optical quality and long-wavelength light emission, achieving up to 1.71 µm at room temperature, has been accomplished through innovative growth methods, particularly the N irradiation method and low growth rates. The resulting laser structures exhibit superior performance metrics, including low threshold current density and high temperature operation, making them competitive with existing technologies in the field.