Growth of dilute nitrides and 1.3 µm edge emitting lasers on GaAs by MBE (original) (raw)
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Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
IEEE Journal of Selected Topics in Quantum Electronics, 2003
We present a comprehensive theoretical and experimental analysis of 1.3-m InGaAsN/GaAs lasers. After introducing the 10-band k p Hamiltonian which predicts transition energies observed experimentally, we employ it to investigate laser properties of ideal and real InGaAsN/GaAs laser devices. Our calculations show that the addition of N reduces the peak gain and differential gain at fixed carrier density, although the gain saturation value and the peak gain as a function of radiative current density are largely unchanged due to the incorporation of N. The gain characteristics are optimized by including the minimum amount of nitrogen necessary to prevent strain relaxation at the given well thickness. The measured spontaneous emission and gain characteristics of real devices are well described by the theoretical model. Our analysis shows that the threshold current is dominated by nonradiative, defect-related recombination. Elimination of these losses would enable laser characteristics comparable with the best InGaAsP/InP-based lasers with the added advantages provided by the GaAs system that are important for vertical integration.
HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm
Crystal Research and Technology, 2005
Highly strained In x Ga 1-x As quantum wells (QWs) with GaAs barriers emitting around 1.2 µm are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures using conventional precursors. The effects of growth temperature, V/III ratio and growth rate on QW composition and luminescence properties are studied. The variation of indium incorporation with V/III ratio at a growth temperature of 510°C is found to be opposite to the results reported for 700°C. By an appropriate choice of the growth parameters, we could extend the room temperature photoluminescence (PL) wavelength of InGaAs/GaAs QWs up to about 1.24 µm which corresponds to an average indium content of 41% in the QW. The results of the growth study were applied to broad area laser diodes emitting at 1193 nm with low threshold current densities.
High T0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source
IEEE Photonics Technology Letters, 2002
We demonstrate high performance, = 1 3and 1.4-m wavelength InGaAsN-GaAs-InGaP quantum-well (QW) lasers grown lattice-matched to GaAs substrates by gas source molecular beam epitaxy (GSMBE) using a solid As source. Threshold current densities of 1.15 and 1.85 kA/cm 2 at = 1 3 and 1.4 m, respectively, were obtained for the lasers with a 7-m ridge width and a 3-mm-long cavity. Internal quantum efficiencies of 82% and 52% were obtained for = 1 3 and 1.4 m emission, respectively, indicating that nonradiative processes are significantly reduced in the quantum well at = 1 3 m due to reduced N-H complex formation. These Fabry-Pérot lasers also show high characteristic temperatures of 0 = 122 K and 100 K at = 1 3 and 1.4 m, respectively, as well as a low emission wavelength temperature dependence of (0.39 0.01) nm C over a temperature range of from 10 C to 60 C.
1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
physica status solidi (c), 2006
High structural and optical quality 1.3 µm GaInNAs /GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn 0.425 NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In 0.425 GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellösung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs.
Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation
IEEE Journal of Quantum Electronics, 1991
A study of strained InGaAs quantum wells grown on GaAs by molecular beam epitaxy was performed in order to optimize the growth conditions for strained-layer single-and multiple-quantum-well lasers. Photoluminescence of the quantum wells show a rapid degradation in material quality as the substrate temperature is reduced below 500°C. ?inglequantum-well (SQW) laser structures contain a 55 A 35% InGaAs quantum well, while multiple-quantum-well {MQW) lasers contain four 25% or 35% JnAs mole fraction 55 A quantum wells. The 35% SQW lasers emit at 1.06 pm, while the 25% InGaAs MQW lasers emit at a wavelength of 995 nm and the 35% MQW lasers emit at 1.07 pm. The SQW lasers have threshold current densities as low as 83 A/cm2 for 150 X 1000 pm devices. Microwave modulation bandwidths increase with an increasing In mole fraction and number of quantum wells, as predicted by theory. A differential gain of 5.0 x lo-'' cmz is calculated from the microwave response measurements for the 35% MQW devices, and it is more than 16 times greater than values reported for InGaAsP bulk lasers. The -3 dB bandwidth of 10 X 200 pm 35% MQW devices exceeds 15 GHz, and it is the highest continuous-wave direct-modulation bandwidth reported for a quantum-well laser.
IEE Proceedings - Optoelectronics, 2004
The authors have calculated the band structure of 1.3-mm InGaAsN/GaAs(N)/GaAs compressively strained quantum wells (QW) using the band anticrossing model and an eight-band k.p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent. Because of the high compressive strain in the QW, strain-compensated structures may be required in order to grow stable multiple QWs; with this in view, the band structure of InGaAsN/GaAsP/GaAs QWs emitting at 1.3 mm was studied. Dilute nitride structures also offer the possibility of growing tensile-strained QW lasers emitting at 1.55 mm on an InP substrate. In order to evaluate the potentialities of such structures, the band characteristics of InGaAsN/InGaAsP/InP heterostructures were determined with a TM-polarised fundamental transition around 1.55 mm.
Applied Physics Letters, 1996
High structural and optical quality In x Ga 1Ϫx P/GaAs quantum wells, with x from 0.51 to 0.45, have been successfully grown by atomic layer molecular beam epitaxy. In that compositional range, an important blue shift of the quantum well luminescence lines is observed, which is explained by an increase of the conduction band gap offset from compressive to tensile strain conditions. The luminescence intensity decreases with temperature above 20-30 K, which is attributed to impurities located at the interfaces and inside the quantum wells. The influence of the In content on the oscillator strength of the optical transitions is also evaluated.
Type-II InGaN-GaNAs quantum wells for lasers applications
Applied Physics Letters, 2008
We present a visible III-nitride gain medium based on type-II InGaN-GaNAs quantum well (QW), employing thin dilute-As GaNAs layer. The utilization of GaNAs layer shifts the hole confinement to the center of the type-II QW, which significantly reduces the charge separation effect. ...