High performance n+/p and p+/n germanium diodes at low-temperature activation annealing (original) (raw)

In this work we demonstrate the fabrication and characterization of high performance junction diodes using annealing temperatures within the temperature range of 300-350°C. The low temperature dopant activation was assisted by a 50 nm platinum layer which transforms into platinum germanide during annealing. The fabricated diodes exhibited high forward currents, in excess of 400 A/cm 2 at $|0.7| V for both p + /n and n + /p diodes, with forward to reverse ratio I F /I R greater than 10 4. Best results for the n + /p junctions were obtained at the lower annealing temperature of 300°C. These characteristics compare favorably with the results of either conventional or with Ni or Co assisted dopant activation annealing. The low-temperature annealing in combination with the high forward currents at low bias makes this method suitable for high performance/low operating power applications, utilizing thus high mobility germanium substrates.