Quantitative assessment of mobility degradation by remote Coulomb scattering in ultra-thin oxide MOSFETs: measurements and simulations (original) (raw)

IEEE International Electron Devices Meeting 2003

Abstract

In this paper, we report measurements of electron effective mobility (μeff) in ultra-thin (UT) pure SiO2 bulk MOSFETs. A low substrate doping was intentionally used to better detect a possible μeff degradation at small Tox. New quantitative criteria were developed and used to obtain μeff measurements unaffected by either gate doping penetration or gate oxide leakage. Mobility simulations, based on

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