High Frequency Noise in Manufacturable (original) (raw)

2011

Abstract

HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable CNTFETs. These first multi-tube multi-fin ger CNTFETs exhibit still rela­ tively high values for the minimum noise figure (NF min = 3.5 dB at 1 GHz). Based on detailed compact modelin g, the ori gin of this noise can be explained by the existence of the parasitic network and metallic tubes. Keywords-compone nt:

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