Monte Carlo study of the quasi two-dimensional electron gas in the high electron mobility transistor (original) (raw)

This paper presents a Monte Carlo study of the quasi two-dimensional electron gas in high electron mobility transistors (HEMTs). It demonstrates that the total subband population decreases significantly, dropping below 15% of the equilibrium level when a drain voltage of -0.5V is applied. The study reveals that increasing the drain voltage results in a higher carrier density in the bulk material and suggests that a notable portion of the drain current may flow through unintended pathways in the AlGaAs layer, which could degrade device performance.