Fabrication of Polycrystalline Silicon Films from SiF4/H2/SiH4Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties (original) (raw)

Polycrystalline silicon thin films show great potential for use in advanced electronic and photovoltaic applications due to their high conversion efficiency and low production costs. This paper explores a new method of producing poly-Si films through aluminum-induced crystallization (AIC) using Si-rich oxide (SiO_x) as the precursor, demonstrating that thermal annealing of SiO_x/Al bilayers can produce high-quality poly-Si thin films with good crystallinity. The findings suggest this approach may serve as a viable alternative for developing low-cost functional devices.