28 GHz balanced pHEMT VCO with low phase noise and high output power performance for 5G mm-Wave systems (original) (raw)
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Study and Design of a MMIC Voltage Controlled Oscillator for 5G mm-wave band Applications
A design of voltage controlled oscillator (VCO) in the 5G mm-wave band is presented in this paper. The circuit is designed in Monolithic Microwave Integrated Circuit (MMIC) technology in PH15 process from UMS foundry using ADS software from Agilent. This oscillator will be suitable for wireless communication systems of the next generation 5G mm-wave band. The simulation results show that the designed circuit can deliver a quasi-sinusoidal signal with an output power up to 5 dBm for an oscillation frequency of 28.02 GHz with a rejection rate of 25 dB for the second harmonic. This VCO consumes 76 mW and exhibits a tuning range of 1.77 GHz with a good linearity over the entire range. The phase noise achieved is about-100.9 dBc / Hz at a 1 MHz offset and a good figure of merit (FOM) of-180.37 dBc / Hz. The total area occupied by this VCO is 0.25 mm 2 .
A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology
International Journal of Electrical and Computer Engineering (IJECE), 2021
A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to achieve a very small chip size. A 0dBm-output power over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of-96.274 dBc/Hz and-116.24 dBc/Hz at 1 and 10 MHz offset frequency from the carrier respectively are obtained on simulation. A power consumption of 111 mW is obtained for a chip size of 0.268 mm 2. According to our knowledge, this circuit occupies the smallest surface area compared to pHEMTs oscillators published in the literature. Keywords: 5G Compact VCO mm-Wave band pHEMT transistor pHEMT varactor This is an open access article under the CC BY-SA license.
5G mm-wave Band pHEMT VCO with Ultralow PN
Advances in Science, Technology and Engineering Systems Journal
Oscillator phase noise (PN) has a strong impact on the spectral purity of the RF signal in wireless systems and is, therefore, a main challenge when designing a local oscillator. In this paper, we propose a new approach for designing a low PN oscillator based on the Time-Invariant Linear Model of phase noise. It leads on voltage-controlled oscillator (VCO) simulated good performances: a low phase noise (PN) near-123.2 dBc/Hz@1MHz offset from the carrier, an output power of 3.26 dBm, and an output signal frequency ranging from 27.98 GHz to 29.67 GHz. Low power-consumption (51mW) and small size (0.237 mm 2) benefit from MMIC UMS foundry (United Monolithic Semiconductors) and 0.15 µm-pHEMT GaAs technology.
International Journal of Electrical and Computer Engineering (IJECE), 2022
A novel structure of low phase noise and high output power monolithic microwave integrated circuit (MMIC) oscillator is presented in order to use it in 5G applications. The oscillator is based on the ED02AH process which allows us to design a microwave oscillator keeping a minimum size which is impossible to have it using other technologies since microwave oscillators are sensitive components above 20 GHz. The oscillator is studied, designed, and optimized on a GaAs substrate from the OMMIC foundry using the advanced design system (ADS) simulator in order to obtain a miniaturized oscillator (1.1×1.3 mm2 ) generating two signals of different frequencies fo1=26 GHz and fo2=30 GHz. The objective is to design an oscillator with high output power and low phase noise while respecting its specifications. The optimization of the proposed microwave oscillator shows satisfying results. Indeed, at 26 GHz and 30 GHz, the output powers are respectively 13.33 dBm and 14.89 dBm. The oscillator produces a sinusoidal signal of 1.5 V and 1.75 V amplitude respectively at 26 GHz and 30 GHz. The oscillator phase noise at fo1 and fo2 resonance frequencies using the liquid crystal (LC) resonator shows respectively -109 dBc/Hz and -110 dBc/Hz at 10 MHz offset.
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CMOS High Swing and Q Boosted Dual Core Voltage Controlled Oscillator for 5G New Radio Application
Applied Computational Electromagnetics Society Journal, 2023
This paper describes a low power, low phase noise CMOS voltage controlled oscillator (VCO) with a cascoded cross-coupled pair (XCP) configuration for high data rate 5G New Radio (5G-NR) applications. The core consists of a primary auxiliary VCO built as a negative conductance circuit to improve phase noise and a secondary core with a cascoded formation to increase output voltage swing. A switched varactor array (SVA) wideband tuner is integrated for a wide bandwidth application in a low power implementation. The dual-core VCO was designed in CMOS 130 nm technology and occupies only 1.05 mm 2 of space. With a supply voltage of 1.2 V, the VCO achieved a tuning range of 32.43% from 3.45 GHz to 4.47 GHz. At 3.96 GHz carrier center frequency with 1 MHz offset, the total power consumption is 0.7 mW with a corresponding phase noise (PN) of −121.25 dBc/Hz and a Figure of Merit (FoM) of 193.25 dBc/Hz. The results are validated using Cadence Spectra RF simulations.
A 21.5/43-GHz dual-frequency balanced Colpitts VCO in SiGe technology
IEEE Journal of Solid-State Circuits, 2000
A balanced Colpitts voltage-controlled oscillator (VCO) is designed and fabricated in a commercially available 0.25m SiGe BiCMOS process. It has the characteristics of the push-push VCO, i.e., the VCO has simultaneously a differential output at a fundamental frequency of 21.5 GHz and a single-ended output at the second harmonic frequency of 43 GHz. A differential tuning technique is applied to reduce the phase noise. The measured phase noise at 1-MHz offset is 113 dBc/Hz at 21.5 GHz and 107 dBc/Hz at 43 GHz. The corresponding output power is about 6 and 17 dBm, respectively, with a 5% tuning range and a 130-mW dc power consumption.
Fully integrated 5.35-GHz CMOS VCOs and prescalers
IEEE Transactions on Microwave Theory and Techniques, 2001
Two 5.35-GHz monolithic voltage-controlled oscillators (VCOs) and two prescalers have been fabricated in a digital 0.25m CMOS process. One VCO uses p + /n-well diodes, while the other uses MOS varactors. of 57 at 5.5 GHz and 0-bias (low-condition) for a p + /n-well varactor has been achieved. For an MOS varactor, it is possible to achieve a quality factor of 140 at 5.5 GHz. The tuning ranges of the VCOs are 310 MHz, and their phase noise is 116.5 dBc/Hz at a 1-MHz offset while consuming 7 mW power at DD = 1 5 V. The low phase noise is achieved by using only PMOS transistors in the VCO core and by optimizing the resonator layout. The prescalers utilize a variation of the source-coupled logic. The power consumption is 4.1 mW at 1.5-V DD and 5.4 GHz. By widening the transistors in the first three divide-by-two stages, the maximum operating frequency is increased to 9.96 GHz at DD = 2.5 V. (S'98) received the B.S. degree (with highest honors) and the M.Eng. degree in electrical engineering from the University of Florida, Gainesville, in 1996 and 1998, respectively, where he is currently pursuing the Ph.D. degree in electrical engineering.
IEEE Journal of Solid-state Circuits, 2002
The tuning curve of an LC-tuned voltage-controlled oscillator (VCO) substantially deviates from the ideal curve 1 ( ) when a varactor with an abrupt ( ) characteristic is adopted and the full oscillator swing is applied directly across the varactor. The tuning curve becomes strongly dependent on the oscillator bias current. As a result, the practical tuning range is reduced and the upconverted flicker noise of the bias current dominates the 1 3 close-in phase noise, even if the waveform symmetry has been assured. A first-order estimation of the tuning curve for MOS-varactor-tuned VCOs is provided. Based on this result, a simplified phase-noise model for double cross-coupled VCOs is derived. This model can be easily adapted to cover other LC-tuned oscillator topologies. The theoretical analyses are experimentally validated with a 0.25m CMOS fully integrated VCO for 5-GHz wireless LAN receivers. By eliminating the bias current generator in a second oscillator, the close-in phase noise improves by 10 dB and features 70 dBc/Hz at 10-kHz offset. The 1 2 noise is 132 dBc/Hz at 3-MHz offset. The tuning range spans from 4.6 to 5.7 GHz (21%) and the current consumption is 2.9 mA.
Ka-band PHEMT MMIC VCO with wide tuning range
Microwave and Optical Technology Letters, 2003
A Ka-band MMIC VCO utilizing 0.15-m T-gate GaAs P-HEMT technology is presented. The VCO exhibits a low-phase noise property with wide tuning range of up to 3 GHz. A balanced buffer amplifier is also developed to ensure that the output power is higher than 10 dBm. The best measured phase noise at 1 MHz offset is Ϫ106 dBc/ Hz. By varying the bias voltage of the on-chip varactor, the frequency can be continuously tuned from 33.3 to 36.3 GHz. In this frequency range, output power higher than 10 dBm has been measured without using the buffer amplifier. The buffer amplifier exhibits a typical gain of 5 dB with 15-dBm output power. A Lange coupler provides good matching between the VCO and the amplifier.