Effect of Substrate and Annealing on Electrical, Magnetic and Morphological Properties of Ni Thin Films (original) (raw)
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Thin Solid Films, 2014
Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al 2 O 3 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni-Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the b111N texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t Cr , then stress is relieved and grain size increases. All these results will be discussed and correlated.
IAEME PUBLICATION, 2020
This research has developed Cu/Ni film aided by the magnetic field (B) to investigate the effects of the deposition voltage on the microstructure and sheet resistivity of Ni film. Deposition was carried out with electroplating technique on the voltages that vary from 1.5 V to 7.5 V, while electrolyte temperature of 60°c, electrode distance of 4 cm, deposition time of 1 minute. The magnetic field of 200 gauss was installed on the parallel direction to the electric field (E). kness directly proportional to the voltage, while on the voltages over 4.5 V the thickness of the film decreases until a half of maximum thickness. Electroplating has also produced the crystal structured Cu/Ni film. The dominant peaks are on the 2 theta angles of approximately 44.18° 52.38° that correspond to Ni[110] and Ni[111]. The deposition voltage also plays a role in changing the regularity level of the crystal structure both for Ni[110] and Ni[111], also influence the inter-planar distance (d-spacing) for both directions [110] and [111]. From the voltage 1.5 – 4.5V, the d-spacing profile of Ni [110] and Ni[111] are similar, but on the voltages over 4.5 V, the d-spacing of Ni[100] crystal decreases while Ni[111] increases. In accordance with the grain size, in the voltages from 1.5 – 4.5 V the grain size tends to decrease, but over 4.5 V it tends to increase. The deposition voltages from 1.0 – 7.5 V produce the Ni sheet resistivity (Rs) of approximately between 6.43 – 15.11 µΩ/sq. The highest value of 15.11µΩ/sq corresponds to the voltage of 3.0 V. The high d-spacing and the small grain size contribute to the high Rs. Mean while, the lowest value of 6.43 µΩ/sq corresponds to the voltage of 6.0 V. The high level regularity of crystal structure,The great d-spacing, and the big grain size contribute to the low Rs
Journal of The Electrochemical Society, 2006
The properties of electroplated Ni thin films have been systematically investigated as a function of plating temperature and current density. The resistivity and its temperature coefficient remain unchanged on varying the process conditions, though the values of these properties are approximately three times and one-half of those of bulk Ni material, respectively. Optimal conditions of J = 2 mA/cm 2 and 60°C were found for stress-free Ni thin films. The modulus of elasticity of the Ni films is as high as that of bulk Ni ͑210 GPa͒ when plated at high temperature and low current density, and then decreases linearly with increasing plating current density, down to 85 GPa at a plating current density of 30 mA/cm 2. It is believed that higher plating rates produced fine-grained structures of low density, leading to a high tensile stress and low modulus of elasticity, while lower plating rates produced a dense material with a modulus of elasticity close to that of bulk Ni and a compressive residual stress. A clear correlation between modulus of elasticity and the stress exists, which reveals that a material under high tensile stress may posses a low modulus of elasticity, and is not suitable for fabrication of microelectromechanical systems devices.
Structural characterization of the nickel thin film deposited by glad technique
Science of Sintering, 2013
In this work, a columnar structure of nickel thin film has been obtained using an advanced deposition technique known as Glancing Angle Deposition. Nickel thin film was deposited on glass sample at the constant emission current of 100 mA. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The obtained nickel thin film was characterized by Force Modulation Atomic Force Microscopy and by Scanning Electron Microscopy. Analysis indicated that the formation of the columnar structure occurred at the film thickness of 1 μm, which was achieved for the deposition time of 3 hours.
ANNEALING EFFECT ON CHARACTERISTICS OF NICKEL-FERROUS ALLOY THIN FILMS
A.R. Research Publication ( Conference World), 2021
Ni-Fe alloy thin films were created via electroplating at ambient temperature. After that, the Ni-Fe thin films were electroplated and annealed at 200 degrees Celsius. In the FCC phase, the microstructure of Ni-Fe deposited films is orientated. They were characterised morphologically, structurally, and mechanically. Ni-Fe films were bright and uniformly covered on the surface. The deposition of Ni-Fe films was also nanoscale, with an average crystalline size of 92 nm. Ni-Fe has a micro hardness of 138 VHN after annealing. Keywords: Electroplating, electrolytic bath, crystalline size, VSM, Ni-P, X-ray diffraction, VHN, SEM.
Magnetoresistive properties of Ni-based thick films
Journal of Materials Science: Materials in Electronics, 1990
Investigations have been carried out on the electrical properties of nickel-based films prepared from air-fireable pastes on alumina substrates. In particular, magnetoresistive effects have been studied as a function of temperature, strength and direction of the magnetic field. These properties were determined in films at different stages of formation, i.e. prepared at various peak firing temperatures and dwell times, and compared with those displayed by nickel foils. These results provide the basis for the development of magnetoresistive thick-film sensors.
Nano-Morphological, Magnetic and Structural Properties of Ni Films Prepared by RF-Sputtering
Engineering Journal, 2012
Sputtered Ni Films with various deposited times (30, 60, 90,120 and 150 min.) were prepared on glass substrate by RF-sputtering in Argon gas to study effects of sputtering time on their morphological, magnetic and thermal properties. Surface morphological of Ni films were investigated by AFM. The AFM images show a small variation of surface roughness with sputtering time. Average surface roughness of Ni films over scan area of 1m x 1m, 5m x 5m and 10m x 10m are about 0.57, 1.64 and 2.49 nm, respectively. The AFM result infers that Ni films prepared by RF-sputtering exhibit surface roughness in order at nano-scale and have smoother surface than that prepared by DC-sputtering [1]. Structure of Ni films was characterized by XRD. The results display that Ni films exhibit a broad peak of Ni (FCC) phase in (111) plane with a hump at 2 = 23 o [1, 2]. Intensity of Ni (111) peak is increased with increasing sputtering time. Magnetic property of Ni films was study by VSM. The VSM results confirm that Ni films deposited for 90-150 min have a ferromagnetic phase and saturation magnetization is increased whereas coercive field is practically kept constant with increasing deposited time [3, 4]. The DTA result of Ni films show an exothermic peak at 850 o C corresponding to decomposition of Ni atoms from the glass substrate. The results confirm that surface roughness, magnetic and structural properties Ni films prepared by RF sputtering can be improved by an appropriate deposited time.
Influence of Technological Parameters on the Evolution of Nickel Films Deposited by Electrolysis
The influence of technological parameters on the structure of nickel layers electrodeposited on a copper substrate in a Watts bath has been studied. The complex influence of current densities, temperature and pH values on the formation of the deposition layers are compared. The surface morphology of the nickel films was analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). X-ray diffraction (XRD) was used to investigate the crystallinity of the prepared samples. The increase in the current density leads to fine crystallized films, while layers obtained at even higher current density have dendritic structures. The temperature increasing results in a structure change from fine to coarse.
Electroless deposition, post annealing and characterization of nickel films on silicon
Bulletin of Materials Science, 2008
Electroless deposition of nickel (EN) films on n-type silicon has been investigated under different process conditions. The interface between the film and substrate has been characterized for electrical properties by probing the contact resistances. X-ray diffraction and atomic force microscopy have been performed to obtain information about the structural and morphological details of the films. As a comparative study, nickel films have also been sputter deposited on silicon substrates. An as-deposited electroless film is observed to form non-ohmic contact while in a sputtered film prepared without the application of substrate heating, the formation of metal-insulating-semiconductor type junction is seen.