CMOS-Integrated Poly-SiGe Piezoresistive Pressure Sensor (original) (raw)
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A critical review on design of MEMS based piezoresistive pressure sensor
One of the first MEMS devices to be commercialized is Piezoresistive pressure sensors. Piezoresistive pressure sensors are simpler to integrate with electronics, they are inherently shielded from RF noise and their response is more linear while compared to capacitive pressure sensors. Whereas, piezoresistive devices have always dominated the pressure sensor market. A silicon dioxide layer for isolation of piezoresistors from bulk is used in a Polysilicon based pressure sensors. Thereby reducing the leakage current compared to the p-n junction isolation in Si piezoresistors. This paper focuses on the review of piezoresistive pressure sensor principles, design, modeling, parameters to consider, materials that can be used in fabrication. Few models of piezoresistive pressure sensors have been simulated and the results are presented.
A Piezoresistive Micro Pressure Sensor Fabricated by Commercial DPDM CMOS Process
2005
A piezoresistive pressure sensor with a chip area of 2 mm´4 mm has been fabricated by a standard CMOS process with additional MEMS post-process. The structure layers follow the design rules of the CMOS 0.8 mm DPDM (Double-Polysilicon-Double-Metal) multiple-project-wafer foundry service provided by the Chip Implementation Center, Taiwan. We used a finite element method software ANSYS to analyze the mechanical behavior of the pressure sensor and used the commercial software CADENCE to design the structure layout. After the CMOS process and the MEMS post-process, two CMOS pressure sensors with different diaphragm thickness were packaged and tested. The sensitivities of sensors were measured as 0.53 mV/atm/V and 13.1 mV/atm/V with non-linearity less than 5% (FSO), and agree with the theoretical prediction qualitatively.
MEMS Piezoresistive Pressure Sensor: A Survey
Piezoresistive pressure sensors are one of the very first products of MEMS technology, and are used in various fields like automotive industries, aerospace, biomedical applications, and household appliances. Amongst various transduction principles of pressure sensor piezoresistive transduction mechanism is widely used. Over a decade therehas been tremendous improvement in the development of the design of piezoresistive pressure sensor starting with the invention of piezoresistance in the silicon to the recent piezoresistive pressure sensor materials. Because of its high sensitivity, high gauge factor, independent to the temperature, linear operation over a wide range of pressure, and many more advantages. This paper provides survey of piezoresistive pressure sensor including their pressure sensing mechanism, evolution, materials, design considerations, performance parameter that to be considered and the fabrication process used
Optimization on the fabrication process of Si pressure sensors utilizing piezoresistive effect
Journal of the Institute of Electronics Engineers of Korea, 2005
In this paper, the fabrication process of Si pressure sensors utilizing piezoresistive effect was optimized. The efficiency(yield) of the fabrication process for Si piezoresistive pressure sensors was improved by conducting Si anisotrophic etching process after processes of piezoresistors and AI circuit patterns. The position and process parameters for piezoresistors were determined by ANSYS and SUPREM simulators, respectively. The measured thickness of p-type Si piezoresistors from the boron depth-profile measurement was in good agreement with the simulated one from SUPREM simulation. The Si anisotrohic etching process for diaphragm was optimized by adding ammonium persulfate(AP) to tetramethyl ammonium hydroxide (TMAH) solution.
IJERT-A Review on Evolution, Current Trends and Future Scope of MEMS Piezoresistive Pressure Sensor
International Journal of Engineering Research and Technology (IJERT), 2016
https://www.ijert.org/a-review-on-evolution-current-trends-and-future-scope-of-mems-piezoresistive-pressure-sensor https://www.ijert.org/research/a-review-on-evolution-current-trends-and-future-scope-of-mems-piezoresistive-pressure-sensor-IJERTV4IS110384.pdf Piezoresistive pressure sensors are the first MEMS devices to be commercialized. They work on the principle of change in resistivity of materials due to applied pressure. Literature reports lot of work and development in this area of sensing mechanisms. This paper provides a review on evolution of these sensors right from thin metal film based technology to the semiconductor technology. The paper presents the current trends in the design and use of piezoresistive pressure sensor. The paper also presents the future scope form these sensors which, will be around the extensive use of materials like SOI, SiC, DLC, CNT and Silicon Nanowires.
. Polysilicon piezoresistive MEMS pressure sensor- ICCSP2017 Camera Ready paper
Pressure measurement is a key part of many commercial and industrial systems. Piezoresistive pressure sensors are simpler to integrate with electronics, they are inherently shielded from RF noise and their response is more linear while compared to capacitive pressure sensors. And piezoresistive devices have always dominated the pressure sensor market. The analyticals that are typically used to model the diaphragm of the pressure sensor have been analysed by many researchers. To optimize the pressure sensor for parameters like linearity and sensitivity, the Finite Element Method (FEM) is incorporated. The selection of appropriate parameters of piezoresistors such as the shape and the position of the piezoresistor on the pressure sensor diaphragm, thickness of diaphragm are important. This study shows the scope of using analytical solutions and design techniques for a piezoresistive pressure sensor.
Facta universitatis - series: Electronics and Energetics, 2015
Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ? 0.3?C can be achieved.
Fabrication and characterization of a piezoresistive pressure sensor
Procedia Engineering, 2010
In this work, we report the fabrication and characterization of a SiC/SiO 2 /Si piezoresistive pressure sensor. The sensor structure consists of six PECVD SiC thin-film piezoresistors configured in Wheatstone bridge on a thermally oxidized micromachined silicon diaphragm. In order to fabricate this sensor, three lithographic masks were designed: one to define the square diaphragm (1800 μm x 1800 μm), another for the piezoresistors and the third for the Ti/Au metal lines. The diaphragm was formed by anisotropic etching of Si in KOH solution and the piezoresistors by reactive ion etching (RIE) of SiC. The sensor chip size is 4.5 mm x 4.5 mm. It was bonded on an alumina substrate using silicone and an aluminum cup was used for protection. The output voltage of the sensor was measured for applied pressure ranging from 0 to 12 psi and voltage suply of 12V.