Dependence of metal gate work function variation for various ferroelectric thickness on electrical parameters in NC-FinFET (original) (raw)

Ferroelectrics

Abstract

Abstract We have reported the impact of work function variability (WFV) of TiN metal gate on the variation in electrical parameters for negative capacitance FinFET (NC-FinFET) through TCAD simulator. It is found that as the thickness of ferroelectric layer (tFE) increases, the fluctuation in electrical parameters like threshold voltage (σVT), subthreshold swing (σSS), on current (σIon), and off current (σIoff) are decreases at different average grain size (). However, the increase in leads to more fluctuation in electrical parameters. It is also observed that the distribution of electrical parameter is close to normal for small and bounded for large

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