A Survey Analysis on CMOS Integrated Circuits with Clock-Gated Logic Structure (original) (raw)
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IET Circuits, Devices & Systems, 2008
Dynamic CMOS gates are widely exploited in high-performance designs because of their speed. However, they suffer from high noise sensitivity. The main reason for this is the sub-threshold leakage current flowing through the evaluation network. This problem becomes more and more severe with continuous scaling of the technology. A new circuit technique for increasing the noise tolerance of dynamic CMOS gates is studied. A comparison with previously reported schemes is presented. Simulations proved that, when 90 nm CMOS technology is used to realise wide fan-in gates, the proposed design technique can achieve the highest level of noise robustness. A 16 bits OR gate designed as proposed here shows a maximum unity noise gain of 675 mV, a computational delay of 115 ps and an energy dissipation of 33 fJ. Moreover, at the parity of energy-delay product (EDP), the novel approach achieves a noise robustness 10% higher than the most efficient technique existing in the literature, whereas, at the parity of noise robustness, it exhibits an EDP 33% lower. Recently, several techniques have been proposed to reduce the leakage noise sensitivity of high fan-in footless domino gates [4-13]. All the existing techniques improve the noise
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Dynamic CMOS logic circuits are widely employed in high-performance VLSI chips in pursuing very high system performance. However, dynamic CMOS gates are inherently less resistant to noises than static CMOS gates. With the increasing stringent noise requirement due to aggressive technology scaling, the noise tolerance of dynamic circuits has to be first improved for the overall reliable operation of VLSI chips designed using deep submicron process technology. In the literature, a number of design techniques have been proposed to enhance the noise tolerance of dynamic logic gates. An overview and classification of these techniques are first presented in this paper. Then, we introduce a novel noise-tolerant design technique using circuitry exhibiting a negative differential resistance effect. We have demonstrated through analysis and simulation that using the proposed method the noise tolerance of dynamic logic gates can be improved beyond the level of static CMOS logic gates while the performance advantage of dynamic circuits are still retained. Simulation results on large fan-in dynamic CMOS logic gates have shown that, at a supply voltage of 1.6 V, the input noise immunity level can be increased to 0.8 V for about 10% delay overhead and to 1.0 V for only about 20% delay overhead.
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Dynamic logic circuits are used for high performance circuits. Wide OR gates are employed for high speed processors, DRAM, SRAM and high speed logic circuits. Dynamic logic circuits are used for their high performance, but their high noise and extensive leakage has caused some problems for these circuits. However, dynamic CMOS circuits are inherently less resistant to noise than static CMOS gates. So, for dynamic CMOS, the first improvement has to be noise tolerance for the overall reliable operation of VLSI chips designed using deep submicron process technology. In this paper, we propose a new domino logic circuit scheme to reduce subthreshold leakage current in standby mode and to improve noise immunity for wide OR gates. The conditions for our simulations are: Berkeley CMOS 70nm predictive technology for simulated results [1], 0.9V power supply and bottleneck operating temperature of 110°C. Simulation results on 8, 16, 32 and 64 inputs OR gates showed improvements from 2.116X to 15.83X compared with other conventional techniques. Furthermore, while there is an area overhead of 13% compared with 8-input FLSDL, we have achieved a decreased area of 5%, 23% and 33% compared with 16, 32, and 64-input footless standard domino logic (FLSDL) respectively.
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Ieice Transactions on Electronics, 2006
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In digital designs, it becomes more and more important to reduce the supply current variations (di/dt noise) they induce in the supply lines. This is due to the fact that steep variations in supply current give rise to EM (Electro-Magnetic) radiation. In this paper, two new modified low-noise logic styles-Complementary-CBL (C-CBL) and Enhanced-CSL (E-CSL) are presented in which the di/dt noise due to the switching is reduced greatly with respect to standard CMOS (SCMOS) circuits. Furthermore, a comparison with existing alternative low noise techniques shows that, for the same supply voltage and the same power consumption, the Enhanced-CSL circuits have smaller area, higher noise margins and smaller propagation delay.
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IJERT-CS-CMOS: A Low Noise Logic Family for Mixed Signal Integrated Circuits
International Journal of Engineering Research and Technology (IJERT), 2016
https://www.ijert.org/cs-cmos-a-low-noise-logic-family-for-mixed-signal-integrated-circuits https://www.ijert.org/research/cs-cmos-a-low-noise-logic-family-for-mixed-signal-integrated-circuits-IJERTV5IS010510.pdf In low-power CMOS logic circuits operated from a fixed supply voltage can result in uncontrolled conduction over process and temperature variation. The large current-pulses flowing during the logic transitions also cause power-supply noise. Managing the switching-noise in mixed-signal systems fabricated on a single chip is becoming increasingly challenging. Here we introduce a new logic family called CS-CMOS (Current Steering-CMOS) which is obtained by a simple current steering modification to the core CMOS structure. This is a low-noise logic family, so its main application is in the field of mixed signal system-on-chips (SoCs). Existing logic families that minimize the switching-noise generation such as current-steering logic (CSL), current-balanced logic (CBL) etc. require considerably more power than traditional CMOS implementations. But all of these logics reduces switching noise and also improves the switching speed compared to conventional CMOS logic. The current steered CMOS gates (CSCMOS) are specially targeted for use in low-power, wide dynamic range mixed-signal applications where supply noise must be minimized. Analysis for different parameters like power consumption, delay and noise generated are done in cadence using different technologies and compared its performance. Circuit operation and simulation results are presented. Keywords-Current-balanced logic (CBL), current steering logic (CSL),current-steering CMOS (CS-CMOS), mixed signal system-on-chip (SoC), power supply noise.
Improved Power Gating Techniques for Reduction of Noise and Leakage Power in VLSI Circuits
Design of complex arithmetic logic circuits considering ground noise, leakage current, active power and area is a challenging task in VLSI circuits. In this paper, a comparative analysis of high performance power gating schemes is done which minimizes the leakage power and provides a way to control the ground noise. The innovative power gating schemes such as stacking power gating , diode based stacking power gating are analyzed which minimizes the peak of ground noise in transition mode for deep submicron circuits. Further to evaluate the efficiency, the simulation has been done using such high performance power gating schemes. Leakage current comparison of NAND gate without power gating and with power gating scheme is done. Finally it is observed that the leakage current in standby mode is reduced by 80% over the conventional power gating. It is also found that in stacking power gating, the ground noise has been reduced by a small extent over the conventional power gating scheme. We have performed simulations using Tanner in a 180nm standard CMOS technology at room temperature with supply voltage of 2.5 V. Finally, a detailed comparative analysis has been carried out to measure the design efficiency of high performance power gating schemes. This analysis provides an effective road map for high performance digital circuit designers who are interested to work with low power application in deep submicron circuits.