Growth and Characterization of InAsxSb1−x Bulk Crystals and Growth Rate Measurements (original) (raw)

This research focuses on the growth and characterization of bulk InAsxSb1−x crystals, which are promising candidates for applications in infrared detection and thermophotovoltaic devices. Challenges in growing these crystals, particularly due to the high vapor pressure of arsenic, are addressed through optimization of growth conditions and a detailed examination of the In-As-Sb phase diagram. Experimental results confirm that improvements in the growth process lead to a better understanding of compositional uniformity and crystal quality, indicating routes for successful synthesis of these semiconductor alloys.