On the Role of the Coulomb Interaction of Charge Carriers in the Electronic Raman Scattering on Donor Levels in Direct Band Gap Semiconductors (original) (raw)
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Raman scattering by phonons has been measured in a narrow-gap semiconductor, Zn~Hgl_,Se, with x=0 to 0.4 near the E, +A1 energy gap at room temperature. Plasmon-LO phonon coupling modes have been explained by a model taking into account the two-mode behaviour of TO phonons. The photon energy dependence of scattering intensity has shown a strong enhancement near the E1 + A, energy gap. The experimental results have been compared with those of Raman scattering, far-infrared reflection and ellipsometric measurements.
physica status solidi (b), 1980
Explicite approximate analytical expressions are derived for the differential cross sections of tho electronic Raman scattering of circularly polarized light on donor levels with the electronic transition 1s-2s in semiconductors with zincblende structure and direct band gaps. The photon energies are assumed t o be nearly equal t o the band gap and therefore the intermediate states in the valence bands give dominant contributions. The real symmetry properties of the degenerate valence bands are taken into account. The absolute values of the cross sections are calculated for GaAs. TIonyYeHbI RBHbIe aHaaHTmecHrie BbIpaxeHm mt@@epeHqxamHbIx cesemii K O M~I I-Ha4110HHOrO paCCeRHHR UtipI<yJIflPHO IIOJIRpH30BaHHOrO CBeTa Ha HOHOPHbIX 3JIeHTpOIX-HbIX YPOBHRX C IlepeXOAOM 1s-' 2'3 B IIOJIyllpOBOAHHKaX CO CTpYICTYpOfi UHHKOBOfi 3HeprHflMLI, 6JII13KIIMH IE 3HaYelILIlO Eg 3aIIpe~elIlIOfi 30IIbI II IIOBTOMY IlpOMelffYTOqHLIe COCTOIIHIIR B BaJIeHTHOfi 30He Aal OT rJIaBHblfi BKJIaA B CeYeHLlR. YYIITbIBaloTCR peaJIbHbIe CBOfiCTBa CHMhleTpHII BbIpOlff AeHHOfi Ba;It'IITIiOfi 3OHbI. BbI411CJIeHbI a6conlo~~b1e 3IIaqeHIIII 06MaHKH H c I I~H M O~~ a a n p e l u e~~o f i 3OHOfi. IIpeAnonaraeTca, YTO (PoToHbI o6naaalo~ cevcmid AJIR GaAs.
jphys.journaldephysique.org
2014 Dans ce travail nous présentons la théorie de la diffusion de Raman sur les électrons liés aux donneurs neutres dans les semiconducteurs avec une bande interdite directe, quand la fréquence du photon incident est en résonance avec l'exciton. La section efficace de diffusion du polariton avec transition de l'électron de l'état fondamental au premier état excité a été calculée. Abstract. 2014 The theory is presented for the Raman scattering on bound electrons of neutral donors in the semiconductors with a direct band gap at the incident photon frequency in the resonance with the exciton. The crosssection of the polariton scattering with the transition of the donor electron from the ground state to the first excited state is calculated.
Resonant Electronic Raman Scattering in Semiconductors
Physical Review Letters, 1981
The free-energy calculations based on Eq. (2) become inaccurate for & «&~although the stability range of the various phases is expected to be more or less correct. For & =0, the free energies of the various phases have been separately calculated. See E. I.
physica status solidi (b), 1975
Interband electronic resonance Raman scattering for excitation from the split-off valence band to the light-hole and heavy-hole band and from the light-hole band to the heavy-hole band in p-type semiconductors with diamond or zincblende structure has been studied. The polarization dependence of these electronic Raman transitions is stated. The influence of a strong electric field on the form and magnitude of the scattering cross section is calculated. The Raman spectrum will be depressed in the presence of the strong elect.ric field. All explicit results are given for band parameters of Ge. Die elektronische Interband-Resonanz-Ramanstreuung wird fur eine Anregung vom abgespaltenen Valenzband in die BBnder der Ieichten und schweren Locher und vom Band der lcichten Locher in das Band der schweren Locher in p-leitenden Halbleitern mit Diamantoder Zinkblendestruktur untersucht. Es wird die Polarisationsabhangigkeit dieser elektronischen Ramaniibergange bestimmt. Der EinfluS eines starken elektrischen Feldes auf die Form und Gro8e des Streuquerschnitts wird berechnet. Bei Anwesenheit eines starken elekt.rischen Feldes wird das Ramanspektrum unterdriickt. Alle expliziten Ergebnisse werden fiir die Bandparameter von Ge angegeben.
Theory of donor electronic Raman scattering in wurtzite-type semiconductors
Physical Review B, 1982
A theory is presented for the electronic Raman scattering on donor levels in semiconductors with the wurtzite structure. The analytical expressions of the scattering cross section with different photon polarization configurations are derived in the second order of the perturbation theory. A comparison with the experiment is done for Cd3.
Raman scattering study of GaP:N epitaxial layers
Journal of Physics and Chemistry of Solids, 1988
Raman spectra of VPE-grown GaP:N samples were investigated in the temperature range between 20 and 300 K, using five discrete lines of the Ar-ion laser. The nitrogen concentration ranged from 2 x 10" to 3.3. x lOI cm-'. Four nitrogen-related peaks were observed. While the origin of the high-frequency peak is unclear at present, the arguments are given to identify the remaining peaks with a defect-activated LO(X) mode, a nitrogen local vibrational mode, and with its first overtone, respectively.
(b) Tecnológico de Monterrey-Campus Sonora Norte. Bulevar Enrique Mazón López N° 965 C.P. 83000, Hermosillo Sonora, México. Tel./Fax + 52(662) 259 1000. Abstract In this work we determine and show the expressions of the electron states of a step-quantum well with the presence of an external electric field, developed in a GaAs AlGaAs matrix. The electron states are obtained using the envelope function approximation. In this work it is only necessary to consider a single conduction band, which due to the confinement is divided into a subband system, with 0 K. T = Expressions for the electron states and the differential cross-section for an intraband electron Raman scattering process of are presented, the net Raman gain is also calculated. In addition, the interpretation of the singularities found in the emission or excitation spectra is given, since several dispersion configurations are discussed. Furthermore, the effects of an electric field on the electron states and on the differential cross section are studied.