810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures (original) (raw)
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Superlattices and Microstructures, 2019
The 2.1-µm-wavelength InGaSb/AlGaAsSb/GaSb double quantum well lasers, exhibiting a high performance with the peak output power of 1.62W and the maximum conversion efficiency of 27.5%, had been grown by molecular-beam-epitaxy (MBE). Digitally grown Al x Ga 1-x AsSb barriers and grading layers were employed in the devices to increase the valence-band offset and to improve the simplicity and controllability of MBE growth. The quaternary digital alloys were grown with short-period superlattices (SPS) of AlSb, AlAs and GaSb and varieties of growth conditions such as growth temperature, interface control and growth rate were considered to get the high-quality crystal films. The digitally grown film was parametrically characterized by atomic force microscopy, high resolution X-ray and transmission electron microscope, showing a smooth surface, clear satellite peaks and clear growth cross sections, respectively. Besides the good power performance of the devices, a low threshold current density of 60 A/cm 2 was also achieved and the calculated differential resistance was 0.17 Ω.
Applied Physics Letters, 1989
We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm2 at 990 nm were measured for 1540-μm-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-μm-wide stripe and 425-μm-long cavity. With reflective coatings the best device showed 0.9 mA threshold current (L=225 μm). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.
Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. The results for cases of 2-QW (2 Quantum Wells) and 3-QW structures are compared with these for 1-QW. A significant improvement of useful laser parameters is obtained by increasing the number of Quantum Wells and optimizing the width of waveguides. In particular, the maximum optical efficiency is shown to reach 88 % for a 3-QW structure with optimal width of waveguides. The width of optical intensity profile of MQW lasers increases, leading to lowering maximal light power density passing through laser facets, decreasing the risk of catastrophic damage of mirrors.
High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm
IEEE Photonics Technology Letters, 2002
In this letter, high-power highly strained In Ga 1 As quantum-well lasers operating at 1.2 m are demonstrated. The edge emitting broad area (BA) laser diode structures are grown by metal organic vapor phase epitaxy at low growth temperatures using trimethylgallium, trimethylindium, and arsine sources. In the laser structure, an InGaAs QW is sandwiched between the GaAs waveguide and AlGaAs cladding layers. The operating wavelength for the laser diode at room temperature (20 C) is about 1206 nm, which redshifts to 1219 nm at 46 C. The transparency current density for the BA laser diodes is as low as 52 A/cm 2 and the characteristic temperature value is 76 K. High-power laser operation in pulse mode (about 1.6 W) at room temperature was achieved.
IEEE Journal of Quantum Electronics, 1993
0.98-1.02-pm strained InGaAs/AIGaAs double quantum-well laser diodes (LD's) with GaInP buried waveguides have been developed as light sources for pumping fiber amplifiers. These LD's have a flat surface and a low-loss real index waveguide that provides high differential quantum efficiency and efficient heat dissipation. For 0.98-pm LD's, stable operation for over 10 000 h under 100 mW CW conditions at 50°C has been achieved, and the extrapolated lifetime is estimated to be 60,000 h at 50°C. For 1.02-pm LD's, a maximum light output power of 415 mW, fiber output power as high as 70 mW, and stable operation for over 2300 h at 100 mW and 50°C have been obtained.
1.142 μm GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
ACS Photonics, 2017
As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 μm at room temperature in GaAsBi 0.058 /GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77−350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77−225 K and decreases to 79 K at 225−350 K.
High-power high-efficiency 1150-nm quantum-well laser
IEEE Journal of Selected Topics in Quantum Electronics, 2000
Edge emitting diode lasers with highly strained In-GaAs quantum wells and GaAs waveguide layers emitting at 1150 nm were investigated focusing on the impact of the waveguide design on the laser performance. Using a thick GaAs waveguide layer broad area devices with low vertical divergence of 20 • FWHM and reliable operation at a power level of 80-mW/µm stripe width were demonstrated.
High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm
IEEE Photonics Technology Letters, 2000
In this letter, high-power highly strained In Ga 1 As quantum-well lasers operating at 1.2 m are demonstrated. The edge emitting broad area (BA) laser diode structures are grown by metal organic vapor phase epitaxy at low growth temperatures using trimethylgallium, trimethylindium, and arsine sources. In the laser structure, an InGaAs QW is sandwiched between the GaAs waveguide and AlGaAs cladding layers. The operating wavelength for the laser diode at room temperature (20 C) is about 1206 nm, which redshifts to 1219 nm at 46 C. The transparency current density for the BA laser diodes is as low as 52 A/cm 2 and the characteristic temperature value is 76 K. High-power laser operation in pulse mode (about 1.6 W) at room temperature was achieved.
High T0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source
IEEE Photonics Technology Letters, 2002
We demonstrate high performance, = 1 3and 1.4-m wavelength InGaAsN-GaAs-InGaP quantum-well (QW) lasers grown lattice-matched to GaAs substrates by gas source molecular beam epitaxy (GSMBE) using a solid As source. Threshold current densities of 1.15 and 1.85 kA/cm 2 at = 1 3 and 1.4 m, respectively, were obtained for the lasers with a 7-m ridge width and a 3-mm-long cavity. Internal quantum efficiencies of 82% and 52% were obtained for = 1 3 and 1.4 m emission, respectively, indicating that nonradiative processes are significantly reduced in the quantum well at = 1 3 m due to reduced N-H complex formation. These Fabry-Pérot lasers also show high characteristic temperatures of 0 = 122 K and 100 K at = 1 3 and 1.4 m, respectively, as well as a low emission wavelength temperature dependence of (0.39 0.01) nm C over a temperature range of from 10 C to 60 C.
Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers
IEEE Journal of Selected Topics in Quantum Electronics, 2001
A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-m lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-InP laser has a threshold current of 12.5 mA at 25 C, with a slope efficiency of 0.43 W/A, at 77 K orgreater characteristic temperature, a 38 perpendicular far-field beam divergence, and will operate at temperatures in excess of 100 C.