Effects of Different Parameters on Low Frequency Flicker Noise Characterization of GaAs-MESFET (original) (raw)

2015

Abstract

Abstract—Excellent microwave performance and potential for low 1/f noise characteristics, GaAs high-power MESFETs have been emerging as most important devices for communication. As Semi-insulating GaAs substrate reduces the effect of parasitic capacitance which in turn improves the speed of device over Si. In this theoretical analysis a simplified cross-sectional structure with Gate length (LG) 0.10 µm & Gate width (W) 0.50 µm is considered to find the power spectral density of the drain current fluctuations in GaAs-MESFET. This chapter presents how Flicker noise is characterized and what is its trend when working at high frequencies and high speed technology. The theoretical analysis on Low Frequency Flicker Noise Characterization of GaAs-MESFETs has been carried out for various gate biases (Vgs) and drain-to source voltage (Vds) to illustrate their anticipated noise performances for high frequency applications by optimizing the parameters ranges.

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