Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy (original) (raw)

Journal of Instrumentation, 2021

Abstract

Radiation degradation of semi-insulating GaAs detectors by 8 MeV electrons up to doses of 1500 kGy is studied in this paper. The influence of irradiation on GaAs material parameters and on spectrometric and electrical properties of fabricated detectors is evaluated. The detector material was degraded before contact preparation, which ensured separation of radiation degradation solely to the bulk material, excluding the contact degradation. The positron annihilation lifetime spectroscopy (PALS) was involved to characterize the substrate material together with galvanometric measurements. Radiation-induced mono-vacancies were clearly identified by PALS in the irradiated materials with increasing concentration up to 2.8 × 1016 cm−3 at maximal applied dose. In correlation with defect concentration the electron Hall mobility decreased with dose down to 3270 cm2 V−1 s−1 and resistivity increased up to 5.22 × 108 Ω cm at 1500 kGy. The bulk material properties influenced the parameters of fa...

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