Crystal growth and investigation of the solid solutions of the system CuGe2P3-I2-IV-VI3 (original) (raw)
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Infrared reflectivity study of (Cu2GeS3)1?x (CuGe2P3) x solid solutions
Journal of Materials Science Letters, 1990
Recently it has been established that the ternary compounds Cu2GeS3 and CuGezP3 form a continuous series of solid solutions over the whole composition range [1]. On the basis of X-ray powder diffraction studies of (Cu2GeS3)~_x(CuGe2P3)x solid solutions with compositions x = 0.2, 0.5 and 0.8 it has been argued that these alloys crystallize in the zinc blende structure with a random distribution of the copper and germanium atoms on the cation sites and of the sulphur and phosphorus atoms on the anion sites [l-3]. The zinc blende structure with a random distribution of the copper and germanium atoms on the cation sites has also been reported for CuGe2P3 by various researchers [4-6]. However, in the case of Cu2GeS 3 it follows from X-ray structure studies on single crystals [7] as well as from infrared lattice vibration investigations in the frequency range of both the fundamental lattice modes [8] and the two-phonon combination modes [9] that this compound crystallizes in a monoclinic lattice with an ordered distribution of the ,copper and germanium atoms on the cation sites. In principle it cannot be completely excluded that (Cu2GeS3)~_x(CuGe2P3)x alloys with small x values crystallize in a non-cubic lattice, too, since it is known from X-ray structure studies of Cu2GeS3 that the reflections characteristic of the monoclinic structure are very weak, indistinct or even absent in powder diffraction diagrams [10, l 1]. In view of this fact it is obvious that careful X-ray diffraction measurements o n (C u 2 Q e S 3) I x (C u G e z P 3) x
Infrared Study of Lattice and Free Carrier Effects in p-Type CuGe2P3
physica status solidi (b), 1984
The ternary compound CuGe2P3 is a semiconductor which crystallizes in the sphalerite structure with a random distribution of the copper and germanium atoms on the cation sites /1, 2/. Results of e a r l i e r investigations regarding phase diagram properties, microhardness, thermal conductivity, and gap energy have been reviewed in /3/. Recently, thermal expansion data and a detailed study of the elastic constants of CuGe2P3 have been published /4/. In the present communication infrared reflectivity spectra of CuGe2 P3 are reported for the first time. F r o m an analysis of the spectra the optical effective m a s s of the holes and the parameters of the optical lattice mode a r e derived.
Crystal growth of argyrodite-type phases Cu8–xGeS6−xIx and Cu8–xGeSe6−xIx (0⩽x⩽0.8)
Journal of Crystal Growth, 2008
The growth of single crystalline argyrodites of type Cu 8Àx GeX 6Àx Y x (X ¼ S, Se; Y ¼ I) is reported. These materials undergo solid-solid phase transitions at temperatures ranging from 30 to 90 1C. In the high temperature phase, Cu 8 GeS 6 crystallizes in the cubic space group F43m. In the low temperature phase, the compound is present in the orthorhombic space group Pmn2 1 . Cu 8 GeSe 6 appears exclusively in the hexagonal space groups P6 3 mc or P6 3 cm, respectively.
Growth and Characterisation of (CuInTe2)1-x(2 ZnTe)x Solid Solution Single Crystals
Crystal Research and Technology, 2000
The crystal structure as well as the optical properties in the band gap region of (CuInTe 2 ) 1-x (2 ZnTe) x solid solution single crystals grown by directional freezing have been studied. The lattice constants exhibit a linear dependence on crystal composition. The chalcopyrite-sphalerite phase transition was observed between x = 0.3 and x = 0.4 . The variation of the band gap with respect to crystal composition can be described by a quadratic expression.
The preparation and characterization of the solid solution series CuFexGe1−xS2 (0.5 < x < 1.0)
Journal of Solid State Chemistry, 1976
Single crystals of the solid solution series CuFe,Gel-,Sz (0.5 < x i 1.0) have been prepared by the chemical vapor transport technique. X-ray diffraction analysis and density measurements have indicated that all members of this system crystallize with the chalcopyrite structure. Mijssbauer spectra show that these crystals contain both iron(H) and iron(II1) on tetrahedral sites and that the iron concentration agrees with that determined by chemical analysis. Magnetic susceptibilities for x = 0.53 display antiferromagnetic behavior. The Nkel temperature of 12°K and an effective moment of 5.0 BM is observed, which approaches the calculated spin-only moment of 4.92 BM. As x increases, deviations from spin-only behavior occur, indicating complex magnetic interactions. * To whom all correspondence should be addressed. 1 In this paper, Fen and Fe"' will be used to denote the d6 and d5 electron configurations of iron, respectively.
Crystal growth and characterization of I-IV2-V3 semiconductor compounds and alloys based thereon
1985
The existence of various ternary adamantine compounds is discussed. Normal and defect ternary adamantine compounds have been a subject of discussion, p a r t icu la r ly from a structural point of view. Rules for the formation of adamantine compounds are explained and related to each other. A home-made DTA apparatus was operated to detect the melting point and phase change from room temperature up to 1300 °C for the materials investigated. The group I-IV2-V3 compounds were the main subject o f this research. CuGe2 Ps and CuSi2 P3 were the only compounds found to grow in this family. The f i r s t was chosen for study in more d e ta i l , mainly because of i ts lower melting point. CuGe2 P3 was compared to other compounds, part icu la r ly structural aspects, and solid solutions were tr ied for twenty-two d iffe ren t materials. This investigation shows s im ila r ity with group 1 2 -IV-Vs compounds, such as CuzGeSs, and new alloys were found with Cu2 Ge$3 . Stoichiometric Cu2 GeS3 d...
X-ray diffraction data and Rietveld refinement of CuGa x In 1−x Se 2 x = 0.15 and 0.50
X-ray powder diffraction data for CuGa 0.15 In 0.85 Se 2 and CuGa 0.50 In 0.50 Se 2 are reported. Indexing of the X-ray diffraction powder pattern and the Rietveld refinement confirmed that these compounds crystallize in the tetragonal crystal system, with space group I-42d No. 122 and lattice parameters of a = 5.75282 Å and c = 11.52253 Å for CuGa 0.15 In 0.85 Se 2 and a = 5.68471 Å and c = 11.28171 Å for CuGa 0.50 In 0.50 Se 2. The CuGa x In 1−x Se 2 system presents the chalcopyrite type crystal structure CuFeS 2 and corresponds to two stacked zinc-blende unit cells. The metal atoms Cu, In, and Ga are regularly ordered in the unit cell. Every Se atom is tetrahedrally bonded to two Cu and two In and Ga atoms.
Crystal Research and Technology, 2004
The influence of the Cu-content in the quaternary compounds Cu x Ag 1-x InTe 2 (0 ≤ x ≤1) on the structural properties of the bulk material was discussed. Bulk ingot materials of Cu x Ag 1-x InTe 2 solid solutions (x = 0.0, 0.25, 0.50, 0.75 and 1.0) have been synthesized by fusion of the constituent elements in the stoichiometric ratios in vacuum-sealed silica tubes. The materials compositions were confirmed by using energy dispersive analysis of X-rays (EDAX). X-ray powder diffraction measurements were performed for all the prepared samples at 300 K in step scanning mode. The analysis of X-ray data has indicated that the crystal structure of the prepared materials with different compositions is single-phase polycrystalline materials corresponding to the tetragonal chalcopyrite structure with space group I42d. The crystal structural parameters were refined by Rietveld method using the Full Prof program. The refined lattice constants (a and c), anion positional parameter, u, and the determined bond distances and angles were found to vary with composition, x, attaining zero tetragonal distortion at x≈ 0.75, which corresponds to an ideal tetragonal unit cell.
Challenges and structural characterization of the solid solution Cu2Zn(Gex Si1-x) Se4
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018
The quaternary chalcogenides Cu<inf>2</inf>ZnSiSe<inf>4</inf> and Cu<inf>2</inf>ZnGeSe<inf>4</inf>crystallize in the orthorhombic wurtz-stannite and tetragonal kesterite type structures, respectively. To investigate thestructural transformation within the solid solution series Cu<inf>2</inf> Zn(Ge<inf>x</inf> Si<inf>1-x</inf>) Se<inf>4</inf> a systematic structural study was performed. Polycrystalline samples, prepared by solid state reaction, show a single quaternary phase as analyzed by WDX spectroscopy. Structural parameters of the mixed crystals were obtained using powder X-ray diffraction. It can be shown that apart from Cu<inf>2</inf>ZnSiSe<inf>4</inf>, Si-rich mixed crystals of this series adopt the wurtzstannite type structure. The lattice parameters are in consistency with Vegard's law and increase with increasing Ge content.