Nanocrystalline Nickel Oxide (NiO) Thin Films Grown on Quartz Substrates: Influence Of Annealing Temperatures (original) (raw)
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Effect of Annealing in Physical Properties of NiO Nanostructure Thin Film
Journal of Nano- and Electronic Physics, 2017
Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the average of the crystalline size of the deposited thin films was calculated using Debye-Scherer formula and found 46.62 for as-deposited sample and 119.89 nm for the annealed one. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging ranging 3.64 for as-deposited sample and 2.98 eV for the annealed one. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.09241 (•cm) −1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity.
Synthesis and characterization of nickel oxide (NiO) thin films
Nickel Oxide (NiO) thin films were deposited by simple spray pyrolysis technique using nickel nitrate solution onto preheated glass substrate at substrate temperature 320 0 C and 380 0 C. Influence of substrate temperature on structural, morphological and optical properties were studied using X-ray diffraction, scanning electron microscopy and optical absorption. XRD results reveal that films are polycrystalline with single phase cubic structure and crystallinity of the film increases as the temperature increases. Surface morphological study shows spherical granular like shape at high deposition temperature. Optical band gap increases from 2.85 to 3.01 eV as the temperature increases.
Physica B-condensed Matter, 2017
A simple and cheap chemical deposition method was used to produce a nickel oxide (NiO) thin film on glass substrates from a solution that contained Ni2+ and monoethanolamine. Thermal treatment of the film at temperatures above 350 °C for 1 h caused decomposition of the nickel hydroxide into nickel oxide. Structural, optical and electrical properties of the film were studied using X-ray diffraction (XRD), spectrophotometry, current-voltage measurements and scanning electron microscopy (SEM). The film was found to be polycrystalline with interplanar spacing of 0.241 nm, 0.208 nm and 0.148 nm for (111), (200) and (220) planes respectively, the lattice constant a was found to be 0.417 nm. The film had a porous surface morphology, formed from a network of nanowalls of average thickness of 66.67 nm and 52.00 nm for as-deposited and annealed films respectively. Transmittance of visible light by the as-deposited film was higher and the absorption edge of the film blue-shifted after annealin...
Journal of Nano Research, 2017
The synthetic NiO nanostructures have been grown using thermal wet oxidation of metallic Ni thin films on ITO/glass by RF sputtering. The deposited Nickel thin films layer were oxidized in stream atmosphere at varying temperatures range of 400 °C to 700 °C inside furnace. Structural, surface morphology, electrical and the optical properties of NiO nanostructure were analysed by X-ray diffraction (XRD), Field effect scanning electron microscope (FESEM), energy dispersive X-ray (EDX), hall effects measurements and UV-Visible spectroscope measurements. XRD analysis proves that the NiO nanostructure has a cubic structure with orientation of the most intense peak at (200), and the film prepared 600 °C shows a better crystalline quality. FESEM and AFM results also prove that by increasing the oxidation temperature, the dimensions and roughness of the NiO nanoparticle thin layer increases. Also the oxidation rate appears higher. The optimum temperature for synthesizing high quality NiO wit...
A solution growth route to nanocrystalline nickel oxide thin films
Applied Surface Science, 2000
A chemical route for preparation of NiO thin films on glass substrates from solution containing nickel(2+) ions and urea is presented. The deposition process is based on the fact that urea decomposes to CO2 and NH3 by heating at higher temperature. The as-deposited and post-deposition heat-treated materials were characterized by X-ray analysis and FTIR spectroscopy. The results of some optical and electrical measurements made on these films are discussed. X-ray analysis confirmed that as-deposited film is 3Ni(OH)2·2H2O, while the post-deposition heat-treated one is nickel oxide with an average crystal size of 13 nm. According to the optical investigations, the absorption coefficient of the deposited material increases upon annealing, the absorption of the annealed films gradually decrease with an increase of the wavelength in the 390–820 nm region. The optical band gap for the post-deposition heat-treated films is 3.6 eV. While the as-deposited thin films are dielectric, the post-deposition treated ones are characterized by resistivity of several MΩs/cm2 at room temperature.
Study of Annealed NiO Thin Films Sputtered on Unheated Substrate
Japanese Journal of Applied Physics, 2003
Nickel oxide (NiO) thin films were deposited on unheated Si substrates by reactive dc magnetron sputtering. Post-deposition annealing was carried out for NiO films in dry air. The effect of annealing temperature (from 500 to 900 C) on the structural, compositional and surface morphological properties of thin NiO films was investigated. The films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). Only the as-deposited films in the metal-sputtering mode were crystalline. Annealing in dry air led to the formation of crystalline phases in all samples. During the annealing process, changes in the crystal structure occurred. All examined NiO films were semiconductors and their conductance increased by four orders of magnitude between 25 and 350 C.
Coatings, 2019
This study investigated nonstoichiometric nickel oxide thin films prepared via the DC-sputtering technique at different film thicknesses. The prepared films were characterized by a surface profiler for thickness measurement, X-ray diffraction (XRD) for film nature, atomic force microscopy (AFM) for film morphology and roughness, UV-visible-near infrared (UV-vis.-NIR) spectroscopy for optical transmittance spectra of the films, and the photoluminescence (PL) spectra of the prepared films were obtained. The measured film thickness increased from 150 to 503 nm as the deposition time increased. XRD detected the trigonal crystal system of NiO0.96. The crystallite sizes were mainly grown through (101) and (110) characteristic planes. NiO0.96 films have a spherical particle shape and their sizes decreases as the film thickness increased. The optical band gap values decrease from 3.817 to 3.663 eV when the film thickness increases. The refractive index was estimated from the Moss relation, ...
Reactive DC magnetron sputter deposition and structural properties of NiO thin films
Engineering and Technology Journal, 2015
Nickel oxide (NiO) films were deposited by using a homemade DC reactive magnetron sputtering system at different working pressure in the range (0.05-0.14)mbar. The effect of working pressure on the structure, surface morphology, optical of NiO films was investigated. X-ray diffraction (XRD) results suggested that the deposited films were formed by nanoparticles with average particle size in the range of (8.145-29.195) nm. And the films are identified to be polycrystalline nature with a cubic structure along (111) and (101) orientation also Ni2O3 was found by XRD. The texture of the films was observed using SEM and AFM, it was observed that the grain size was increased with working pressure. The energy band gap was found to be in the range of (4.1 eV to 3.9 eV) When the film thickness varying from 73 nm to 146.9 nm.
Investigations into the influence of temperature on the optical properties of NiO thin films
Indian Journal of Pure & Applied Physics, 2018
Nanocrystalline thin films of nickel oxide (NiO) have been deposited on glass substrates in polyvinylpyrrolidon (PVP) matrix solution by chemical bath deposition technique. The films have been annealed at 373 K–573 K and changes in their optical properties have been studied. Investigation reveals that the optical properties of the films have been irregularly influenced by heat treatment. They show varied transmittance for different annealing temperatures making them useful for applications in optoelectronic devices. The structural property of the films has been obtained by means of X-ray diffraction (XRD), while the elemental composition has been deduced from Rutherford back scattering spectroscopy (RBS). XRD analyses of the film annealed at 375 K show that the films are crystallized and have rhombohedral structure. The crystallite size of the film has been determined and found to be 89.90 nm. The films band gaps range from 2.30 eV – 2.95 eV, which are lower than that of their solid...
Structural, Optical and Electrical Properties of NiO Nanostructure Thin Film
Journal of Nano- and Electronic Physics, 2016
Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the crystalline size of the deposited thin films was calculated using Debye-Scherer formula and found in the range between 9 and 47 nm. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging between 3.64 and 3.86 eV. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.0896 (Ω cm)-1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity.