Impact ionization in thin AlxGa1−xAs (x=0.15 and 0.30)p-i-ndiodes (original) (raw)

Journal of Applied Physics, 1997

Abstract

The electron and hole multiplication characteristics, Me and Mh, respectively, have been measured in two series of AlxGa1−xAs(x=0.15 and 0.30) p-i-n diodes where the i-region thicknesses, w, vary from 1.0 down to 0.025 μm. From these, the effective electron and hole ionization coefficients, α and β, respectively, have been determined and in the thicker structures agreement is found with data

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