Detailed Analysis of Device Parameters by Means of Different Techniques in Schottky Devices (original) (raw)

Determination of contact parameters of Au/Carmine/n-Si Schottky device

Ümit İncekara

Thin Solid Films, 2010

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Electrical characteristics of Au/ n-GaAs Schottky barrier diodes with and without SiO 2 insulator layer at room temperature

Suleyman Ozcelik

Vacuum, 2009

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Advance View Proofs Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au / n-Type Si Schottky Barrier Diode Modi fi ed Using a PEDOT : PSS Interlayer

Zagarzusem Khurelbaatar

2014

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Barrier height modification of Au/n-Si Schottky structures by swift heavy ion irradiation

Sandeep kumar

2006

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Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current–voltage and admittance–voltage characteristics

Ibrahim Yucedag

Vacuum, 2009

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The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

Mehmet Mahir Bülbül

Applied Surface Science, 2006

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Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes

Guven Cankaya

Zeitschrift Fur Naturforschung a a Journal of Physical Sciences, 2004

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Comparative study of I-V characteristics of the ICB deposited Ag\n-Si(111) and Ag\p-Si(100) Schottky junctions

Bruno Cvikl

Vacuum, 1998

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Current–voltage analysis of a-Si:H Schottky diodes

haziret durmus

Applied Surface Science, 2006

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The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature

haziret durmus

International Journal of Electronics, 2018

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A High Schottky-Barrier of 1.1 eV Between Al and S-Passivated p-Type Si(100) Surface

Muhammed Ali

IEEE Electron Device Letters, 2007

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Gaussian distribution of inhomogeneous barrier height in Au/n-Si (111) Schottky barrier diodes at low temperatures

Mert Emre Yıldırım

Materials Science in Semiconductor Processing, 2014

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Comparative study of I–V methods to extract Au/FePc/p-Si Schottky barrier diode parameters

Ahmet Altındal

Applied Physics A, 2018

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A comparative study on the electrical parameters of Au/nn-Si Schottky diodes with and without interfacial (Ca1.91.9Pr0.10.1Co4Oxx) layer

Prof.Dr. İbrahim USLU

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A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer

Ayşegül Eroğlu

Journal of Materials Science: Materials in Electronics, 2020

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The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes

Enise Ayyıldız

Journal of Electronic Materials, 2002

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The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

Umut Aydemir

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Laterally Inhomogeneous Barrier Analysis Using Capacitance–Voltage Characteristics of Identically Fabricated Schottky Diodes

kübra akgül

Journal of Electronic Materials, 2016

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Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes

suleyman ozcelik

Applied Surface Science, 2004

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Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices

İlbilge Dökme

Philosophical Magazine, 2016

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The analysis of I–V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height

Ilbilge dökme

Microelectronics Reliability, 2011

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Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

Mehmet Mahir Bülbül

Applied Surface Science, 2006

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Analysis of IV characteristics on Au/n-type GaAs Schottky structures in wide temperature range

Şükrü Karataş

Materials Science and Engineering: B, 2005

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Analysis of the temperature���dependent current���voltage characteristics and the barrier���height inhomogeneities of Au/GaN Schottky diodes

Saluru Krupanidhi

2012

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Annealing temperature effect on electrical characteristics of Co/p-type Si Schottky barrier diodes

o. Bakkaloglu

Physica B: Condensed Matter, 2009

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Dielectric, conduction and interface properties of Au/Pc/p-Si Schottky barrier diode

Mustafa COŞKUN

Synthetic Metals, 2012

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Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

Vikash Petwal

Applied Surface Science, 2017

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Implications of electron beam irradiation on Al/n-Si Schottky junction properties

Vikash Petwal

Microelectronics Reliability, 2018

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Temperature dependent current-voltage (IV) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA (Ni, Zn-doped) interfacial layer

Tuncay Tunç

Materials Science in …, 2011

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Gaussian Distribution on Electrical Characteristics of Al/SiO2/p-Si Structures

Sema Ocak

American Journal of Materials Science, 2012

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Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

Sakir Aydogan

Journal of Alloys and Compounds, 2009

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The current-voltage characteristics of V 2 O 5 /n-Si Schottky diodes formed with different metals

Meltem Donmez Kaya, Suleyman Ozcelik

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Inhomogeneities in 130 MeV Au12+ ion irradiated Au/n-Si (1 0 0) Schottky structure

Sandeep Kumar, Yashpal S I N G H Katharria, Vikas Baranwal

Applied Surface Science, 2007

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Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes

Şükrü Karataş

Solid-State Electronics, 2005

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Electrical characterization of Au/ZnO thin film Schottky diode on silicon substrate

Vineet Sahula

Perspectives in Science, 2016

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