INFLUENCE OF AN INTERMEDIATE ANNEALING AND SUBSTRATE NATURE ON STRUCTURAL AND OPTICAL PROPERTIES OF SnO 2 THIN FILMS (original) (raw)
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Journal of Nano-and electronic Physics, 2013
In this presentation we synthesized SnO2 thin film by sol-gel process. Starting from Tin(II) chloride as precursor and methanol as solvent the film was deposited on glass and quartz substrate by novel dip coating method. Structural and morphological analysis was carried out by XRay diffraction (XRD) measurement and Scanning electron microscopy (SEM). Optical characteristics were analyzed from the study of transmission spectrum data obtained by UV / VIS Spectrophotometer. It is observed that the transmission and grain size were more in case of quartz than glass substrate whereas the band gap was more in glass than quartz substrate. From XRD measurement it was confirmed the tetragonal structure of SnO2. EDS analysis depicts the weight percentage of Sn and O as 78.71 % and 21.29 % respectively and also confirms the purity of the film. From the study we concluded that the structural configuration changed a little with change in substrates at same conditions and quartz is the preferable ...
In this work, studying the structural and optical Nano crystalline SnO 2 thin films grown on cleaned glass substrates by using sol-gel (dip coating) technique. It is worthy to say that the thickness of the deposited film was of the order of (300-400)nm. The films are annealed in air at , 300 • C, 400 • C and 500 • C temperatures for 60 minutes. The films that are analyses by X-ray diffraction (XRD), Scanning electron microscopy (SEM) , atomic force microscopy and optical absorption spectroscopy technique. The size of crystalline was observed, as well as, so as to increase with increasing annealing temperature. XRD analysis reveals that the whole films are polycrystalline with tetragonal structure with preferred orientation of (110),(101),(200) and (211). The increase of annealing temperature leads to raise the diffraction peaks and decrease of FWHM. The atomic force microscopy (AFM) and Scanning electron microscopy (SEM) results showed that the average grain size was increase with the increase in annealing temperature. Spectra of transmittance and absorbance was recorded at wavelengths range (300-1000)nm .The optical properties showed high transmission at visible regions. The optical band gap energy was found to be (3.5 , 3.75 , 3,87) eV at annealing temperature (300,400,500)°C respectively.
Tin oxide (SnO 2 ) thin films doped with antimony were grown on plane glass substrates using chemical bath deposition (CBD) technique. Precursor chemicals of stannic chloride and sodium hydroxide were used to supply tin and oxygen ions respectively and triethanolamine (TEA) was added as a complexant. Sb doping was accomplished by adding little quantity antimony chloride that enabled orderly growth of ternary Sn 1-x Sb x O 2 film where 0 < x < 0.1. Synthesized films were annealed at temperatures of between 150 and 350 in steps of 50 for one hour at a time, and the effects on optical and electrical properties of film observed. Such high temperature treatment increased the energy band gap, E g of films annealed at 150 but decreased such gap for films annealed at very high temperatures. Furthermore, the UV-VIS-NIR spectrophotometric analysis of films which provided E g also showed high transmittance (T > 80 %) in visible region and also high absorbance (A > 0.2) in NIR. Annealing also increased electrical conductivity in all the temperatures considered.
Studies on optical properties of polycrystalline SnO2:Sb thin films prepared using SnCl2 precursor
Crystal Research and Technology, 2003
Optical properties of spray deposited antimony (Sb) doped tin oxide (SnO 2 ) thin films, prepared from SnCl 2 precursor, have been studied as a function of antimony doping concentration. The doping concentration was varied from 0-4 wt. % of Sb. All the films were deposited on microscope glass slides at the optimized substrate temperature of 400°C. The films are polycrystalline in nature with tetragonal crystal structure. The doped films are degenerate and n-type conducting. The sheet resistance of tin oxide films was found to decrease from 38.22 Ω/ for undoped films to 2.17 Ω/ for antimony doped films. The lowest sheet resistance was achieved for 2 wt. % of Sb doping. To the best of our knowledge, this sheet resistance value is the lowest reported so far, for Sb doped films prepared from SnCl 2 precursor. The transmittance and reflectance spectra for the as-deposited films were recorded in the wavelength range of 300 to 2500 nm. The transmittance of the films was observed to increase from 42 % to 55 % (at 800 nm) on initial addition of Sb and then it is decreased for higher level of antimony doping. This paper investigates the variation of optical and electrical properties of the as-deposited films with Sb doping.
PROPERTIES OF THIN TRANSPARENT SnO 2 :Sb FILMS
We study the electrical and optical properties of tin dioxide films, produced by the spraying method of aqueous-alcoholic solution of tin tetrachloride with antimony trichloride addition. Results of the influence of the films deposition temperature and the antimony concentration on the resistance, the charge carriers mobility and their concentration, and transmission spectrums are presented.
Characterization of SnO2 films prepared using tin tetrachloride and tetra methyl tin precursors
1999
We have investigated the effect of deposition conditions of SnO2 films, deposited by chemical vapor deposition using tin tetrachloride and tetramethyltin precursors, on the film properties. The type of precursor and the deposition temperature affect the morphology of the films. The structure of the films is determined by the deposition temperature: films deposited at low temperatures show a mixed SnO and SnO2 phase. The processing temperature and type of substrate determine the impurity content in the films. Electrical properties (e.g. the carrier mobility) and optical properties of the films are affected by the structure and the impurity content in these layers.
Synthesis and characterization of SnO2 thin films prepared by dip-coating method
15th Brazilian Workshop on Semiconductor Physics, 2012
The optical, electrical and structural properties of SnO are responsible for a large number of technological 2 applications such as gas sensors, optical-electonic devices, varistors and displays. In this paper, we report the preparation of SnO thin films deposited on glass, quartz and silicon substrates by the technique of sol-gel dip-2 coating. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ellipsometry and Mössbauer spectroscopy. We combine the experimental results with ab initio all-electrons calculations , using the density functional theory within the framework of the full-potential linear augmented plane waves method, in order to extract hyperfine parameters. The results show that the synthesis method is able to produce good quality films and that the theory can be helpful to determine quantities difficult to be measured experimentally.
Post annealing effect on SnO 2 thin films grown by thermal evaporation technique
Nanocrystalline tin oxide thin films were prepared by thermal evaporation technique. The grain sizes, crystallization process and morphology were investigated by x-ray diffraction (XRD) and Atomic Force Microscopy (AFM). Both optical band gap and transmittance were enhanced after heat treatment. All IR modes measured by Fourier Transform Infrared Microscopy (FTIR) spectrometer were assigned. The FTIR spectra show an increase in the intensity of the Eu mode (606.75 cm -1 ) after post annealing, which indicates fine crystallization of SnO2 grains. Thermal treatment induced defects enhance the diffusion of atoms leading to uniformity in size of grains. But the grains were found to be elongated and larger in size, in case of SnO2 films on quartz substrate deposited. The role of substrate on thermal treatment induced grain growth process is discussed.