276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes (original) (raw)

292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base

Rajat Sharma

Japanese Journal of Applied Physics, 2003

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Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

Chu-Young Cho

Applied Physics Letters, 2013

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Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

Jens Rass

Applied Physics Letters, 2014

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AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Michael Kneissl

Applied Physics Letters, 2018

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AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers

Tae-Geun Kim

Applied Physics Letters, 2004

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Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates

Theeradetch Detchprohm

physica status solidi c, 2014

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Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells

Ryan Banal

Applied Physics Letters, 2014

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Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys

Paula Provencio

Journal of Crystal Growth, 2004

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Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

Asif Khan

Applied Physics Letters, 2002

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Characteristics of epitaxial lateral overgrowth AlN templates on (111)Si substrates for AlGaN deep-UV LEDs fabricated on different direction stripe patterns

Masakazu Sugiyama

physica status solidi (c), 2012

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Improved external quantum efficiency of 293 nm AlGaN UVB LED grown on an AlN template

Muhammad A Khan

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Heterostructure for UV LEDs Based on Thick AlGaN Layers

Alexander Usikov

MRS Internet Journal of Nitride Semiconductor Research, 1998

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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Yusuke Tsukada

Japanese Journal of Applied Physics, 2014

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Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures

zhiwei xing

Journal of Crystal Growth, 2019

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AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates

Michael Kneissl

2013

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Polarization-dependent hole generation in 222 nm-band AlGaN-based Far-UVC LED: a way forward to the epi-growers of MBE and MOCVD

M Khan

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Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer

Mu-Jen Lai

Molecules

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Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

Iman S . Roqan

Advanced Functional Materials, 2019

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Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes

Wayne Liu

Applied Physics Letters, 2007

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Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

Jens Rass

Applied Physics Letters, 2015

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Molecular Beam Epitaxial Growth and Device Characterization of AlGaN Nanowire Ultraviolet-B Light-Emitting Diodes

Moab Rajan Philip

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AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

Yitao Liao, C. Thomidis, Theodore Moustakas

Applied Physics Express, 2011

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AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

Michael Shur

Applied Physics Express, 2012

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Compositional Inhomogeneity in AlGaN Multiple Quantum Wells Grown by Molecular Beam Epitaxy: Effect on Ultraviolet Light-Emitting Diodes

Sayantani Sen

Journal of Electronic Materials, 2021

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Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy

Yitao Liao, Theodore Moustakas

MRS Proceedings, 2009

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