Room-Temperature Stimulated Emission from AlN at 214 nm (original) (raw)

Abstract

We report the first ever room temperature (RT) stimulated emission at 214 nm using high quality AlN layers that were grown over patterned sapphire substrates by pulsed lateral epitaxial overgrowth (PLOG) process. The PLOG process yielded fully coalesced layers with total thicknesses in excess of 10 mm resulting in a reduction in the threading dislocation density by several orders. The stimulated emission was achieved at 214 nm under pulsed optical pumping at RT. The RT threshold optical power density was approximately 9 MW/cm 2 and the stimulated edge-emission signal was strongly polarized with E k c.

Loading...

Loading Preview

Sorry, preview is currently unavailable. You can download the paper by clicking the button above.

References (20)

  1. Y. Taniyasu, M. Kasu and T. Makimoto: Nature 441 (2006) 325.
  2. W. H. Sun, V. Adivarahan, M. Shatalov, Y. B. Lee, S. Wu, J. W. Yang and M. A. Khan: Jpn. J. Appl. Phys. 43 (2004) L1419.
  3. J. P. Zhang, X. Hu, Yu. Bilenko, J. Deng, A. Lunev, M. S. Shur, R. Gaska, M. Shatalov, J. W. Yang and M. A. Khan: Appl. Phys. Lett. 85 (2004) 5532.
  4. A. A. Allerman, M. H. Crawford, A. J. Fischer, K. H. A. Bogart, S. R. Lee, D. M. Follstaedt, P. P. Provencio and D. D. Koleske: J. Cryst. Growth 272 (2004) 227.
  5. M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin and H. X. Jiang: Appl. Phys. Lett. 86 (2005) 173504.
  6. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung and M. Razeghi: Appl. Phys. Lett. 84 (2004) 1046.
  7. S. A. Nikishin, M. Holtz and H. Temkin: Jpn. J. Appl. Phys. 44 (2005) 7221.
  8. M. Asif Khan, M. Shatalov, H. P. Maruska, H. M. Wang and E. Kuokstis: Jpn. J. Appl. Phys. 44 (2005) 7191.
  9. T. Takano, Y. Narita, A. Horiuchi and H. Kawanishi: Appl. Phys. Lett. 84 (2004) 3567.
  10. S. Heikman, S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U. K. Mishra, J. S. Speck and S. P. DenBaars: Jpn. J. Appl. Phys. 44 (2005) L405.
  11. T. Detchprohm, S. Sano, S. Mochizuki, S. Kamiyama, H. Amano and I. Akasaki: Phys. Status Solidi A 188 (2001) 799.
  12. Z. Chen, R. S. Q. Fareed, M. Gaevski, V. Adivarahan, J. W. Yang, J. Mei, F. A. Ponce and M. A. Khan: Appl. Phys. Lett. 89 (2006) 081905.
  13. J. P. Zhang, M. A. Khan, W. H. Sun, H. M. Wang, C. Q. Chen, Q. Fareed, E. Kuokstis and J. W. Yang: Appl. Phys. Lett. 81 (2002) 4392.
  14. J. Mickevicius, R. Aleksiejunas, M. S. Shur, G. Tamulaitis, R. S. Q. Fareed, J. P. Zhang, R. Gaska and M. A. Khan: Phys. Status Solidi A 202 (2005) 126.
  15. A. Dmitriev and A. Oruzheinikov: J. Appl. Phys. 86 (1999) 3241.
  16. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, P. Carrier and S. H. Wei: Appl. Phys. Lett. 83 (2003) 5163.
  17. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin and H. X. Jiang: Appl. Phys. Lett. 84 (2004) 5264.
  18. W. W. Chow and M. Kneissl: J. Appl. Phys. 98 (2005) 114502.
  19. H. Kawanishi, M. Senuma and T. Nukui: Appl. Phys. Lett. 89 (2006) 041126.
  20. H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura and T. Nukui: Appl. Phys. Lett. 89 (2006) 081121.