Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition (original) (raw)
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Applied Physics Express, 2017
The growth of high-quality In 0.28 Ga 0.72 Sb epilayer on an AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition is demonstrated. The In 0.28 Ga 0.72 Sb epilayer has a fully relaxed surface roughness of >1.0 nm and a low threading dislocation density of >6.2 ' 10 6 cm %2. The valence band offset (VBO) of 3.11 eV and conduction band offset (CBO) of 3.21 eV for an Al 2 O 3 /In 0.28 Ga 0.72 Sb interface extracted from X-ray photoemission spectroscopy data highlight its suitability for use in single-channel InGaSb-based complementary metal-oxide-semiconductor (CMOS) applications. The type-I straddling gap of an In 0.28 Ga 0.72 Sb/AlSb heterojunction with a VBO of 0.47 eV and CBO of 0.65 eV is also sufficient to prevent both electron and hole leakage currents in CMOS devices.
Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes
Journal of Vacuum Science Technology B Microelectronics and Nanometer Structures, 2008
Metamorphic growth of In 0.15 Ga 0.85 Sb on a GaSb substrate is reported using In x Ga 1−x Sb buffer layers compositionally graded in steps of x = 0.03. All layers were grown using gas source molecular beam epitaxy with a fixed Sb flux providing an excess group-V overpressure. The growth temperature was varied from 450 to 540°C. X-ray diffraction analysis was used to determine the effect of growth temperature on relaxation and residual strain. As the growth temperature is increased, cross-sectional transmission electron microscopy ͑TEM͒ shows that the number of dislocations threading through the metamorphic layer are reduced. Plan-view TEM yields misfit dislocation density around 10 8 cm −2 and from atomic force microscopy, the surface roughness is ϳ1 nm. Both surface roughness and dislocation density improves with higher growth temperature. Finally, p-i-n homojunction diodes of various sizes on metamorphic layers were demonstrated.
Physica Status Solidi (a), 1994
Sb films are grown on GaSb(100) and GaAs(100) substrates and the film defects are investigated by using chemical etching and optical microscopic techniques. A new wet chemical etching method that revealed film defects in thin MBE GaSb and Ino,,,Gao &b films is evaluated, and it is found that a hot HCI solution under illumination is most effective in revealing the defects of the thin MBE films. Dislocations and stacking faults, which are related to the substrate material selected, substrate quality, substrate surface preparation, and the insertion of a buffer layer are clearly observed. In particular, in the growth of Ino,,,Gao,,,Sb, the huge lattice mismatch between the Ino, ,Ga,,,,Sb and GaAs substrate causes severe dislocations, as well as stacking faults. Meanwhile, the AlSb buffer layer is able to eliminate stacking faults and reduce dislocations in Ino.17Gao,83Sb films and thereby improve the electrical characteristics of the Ino,,,Gao,,,Sb film.
Nanotechnology, 2014
Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihila...
A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition
Applied Physics Letters, 2011
Epitaxial growth of Ti3SiC2 thin films with basal planes parallel or orthogonal to the surface on α-SiC Appl. Phys. Lett. 101, 021606 (2012) Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells J. Appl. Phys. 112, 013534 (2012) Growth and characterizations of semipolar (112) InN J. Appl. Phys. 112, 013530 Epitaxial two dimensional aluminum films on silicon (111) by ultra-fast thermal deposition J. Appl. Phys. 111, 124320 Atomic behavior of carbon atoms on a Si removed 3C-SiC (111) surface during the early stage of epitaxial graphene growth
Applied Physics Express, 2009
In situ real-time X-ray diffraction measurements during In 0:12 Ga 0:88 As/GaAs(001) epitaxial growth are performed for the first time to understand the strain relaxation mechanisms in a lattice-mismatched system. The high resolution reciprocal space maps of 004 diffraction obtained at interval of 6.2 nm thickness enable transient behavior of residual strain and crystal quality to be observed simultaneously as a function of InGaAs film thickness. From the evolution of these data, five thickness ranges with different relaxation processes and these transition points are determined quantitatively, and the dominant dislocation behavior in each phase is deduced.
MBE growth and characterisation of AlxGa1−xSb layers on GaSb substrates
Journal of Crystal Growth, 1999
V Ga \V Sb layers on GaSb(0 0 1) have been grown by molecular beam epitaxy (MBE) and characterised by high-resolution X-ray di!raction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. The antimonide layers inevitably contain residual As amounting to 0.5 mol%. This cannot be avoided when growing the "lms in a MBE apparatus previously used for GaAs growth, at least for the applied growth temperature of 4703C. Segregation processes of Ga from the GaSb bu!er layer and Al from the heteroepitaxial layer into the layers above are detected by SIMS. Since monomeric Sb forms metallic "lms on the sample surface, the exposure to a monomeric Sb #ux below 3703C should be avoided in order to obtain a clean surface. The composition of the 150 nm thick quaternary Al V Ga \V As W Sb \W layers was determined with high precision.