Two-dimensional electron gas inδ-dopedSrTiO3 (original) (raw)

Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti, Zr)O3 heterostructure

Applied Physics Letters, 2013

A two-dimensional electron gas (2DEG) in SrTiO 3 is created via modulation doping by interfacing undoped SrTiO 3 with a wider-band-gap material, SrTi 1-x Zr x O 3 , that is doped ntype with La. All layers are grown using hybrid molecular beam epitaxy. Using magnetoresistance measurements, we show that electrons are transferred into the SrTiO 3 , and a 2DEG is formed. In particular, Shubnikov-de Haas oscillations are shown to depend only on the perpendicular magnetic field. Experimental Shubnikov-de Haas oscillations are compared with calculations that assume multiple occupied subbands.

Two-dimensional electron gas with universal subbands at the surface of SrTiO3

Nature, 2011

Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of electron matter at oxide interfaces, exhibiting metal-insulator transitions, superconductivity, or large negative magnetoresistance. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs) remains elusive, although its determination is crucial to understand their remarkable properties. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3, independent of bulk carrier densities over more than seven decades, including the undoped insulating material. This 2DEG is confined within a region of ~5 unit cells with a sheet carrier density of ~0.35 electrons per a^2 (a is the cubic lattice parameter). We unveil a remarkable electronic structure consisting on multiple subbands of heavy and light electrons. The similarity of this 2DEG with those reported in SrTiO3-based heterostructures and field-effect transistors suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices, and a novel route to generate 2DEGs at surfaces of transition-metal oxides.

Aperiodic quantum oscillations in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

npj Quantum Materials, 2020

Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by analyzing the Shubnikov-de Haas oscillations. Interestingly, the quantum oscillations are not 1∕B-periodic and produce a highly non-linear Landau plot (Landau level index versus 1/B). We explore different scenarios leading to 1/B-aperiodic oscillations where the charge and the chemical potential vary as the magnetic field increases. Overall, the magneto-transport data are discussed in light of high-resolution scanning transmission electron microscopy (HRSTEM) analysis of the interface as well as calculations from density functional theory.

Quantum oscillations and subband properties of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

APL Materials, 2014

We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO 3 /SrTiO 3 heterostructures. Shubnikovde Haas oscillations reveal several 2D conduction subbands with carrier effective masses between 1 and 3 m e , quantum mobilities of order 3000 cm 2 /V s, and band edges only a few millielectronvolts below the Fermi energy. Measurements in tilted magnetic fields confirm the 2D character of the electron gas, and show evidence of inter-subband scattering.

Giant spin splitting of the two-dimensional electron gas at the surface of SrTiO3

Nature Material

Two-dimensional electron gases (2DEGs) forming at the interfaces of transition metal oxides exhibit a range of properties, including tunable insulator-superconductor-metal transitions, large magnetoresistance, coexisting ferromagnetism and superconductivity, and a spin splitting of a few meV (refs , ). Strontium titanate (SrTiO3), the cornerstone of such oxide-based electronics, is a transparent, non-magnetic, wide-bandgap insulator in the bulk, and has recently been found to host a surface 2DEG (refs , , , ). The most strongly confined carriers within this 2DEG comprise two subbands, separated by an energy gap of 90 meV and forming concentric circular Fermi surfaces. Using spin- and angle-resolved photoemission spectroscopy (SARPES), we show that the electron spins in these subbands have opposite chiralities. Although the Rashba effect might be expected to give rise to such spin textures, the giant splitting of almost 100 meV at the Fermi level is far larger than anticipated. Moreo...

Highly Confined Spin-Polarized Two-Dimensional Electron Gas in SrTiO_{3}/SrRuO_{3} Superlattices

Physical Review Letters, 2012

We report first principles characterization of the structural and electronic properties of (SrTiO3)5/(SrRuO3)1 superlattices. We show that the system exhibits a spin-polarized twodimensional electron gas, extremely confined to the 4d orbitals of Ru in the SrRuO3 layer. Every interface in the superlattice behaves as a minority-spin half-metal ferromagnet, with a magnetic moment of µ = 2.0 µB/SrRuO3 unit. The shape of the electronic density of states, half metallicity and magnetism are explained in terms of a simplified tight-binding model, considering only the t2g orbitals plus (i) the bi-dimensionality of the system, and (ii) strong electron correlations.

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

Strongly correlated oxides are full of fascinating phenomena owing to their interacting lattice, charge, spin and orbital degrees of freedom.[1–5] Bandgap, a critical parameter for an oxide insulator, is well determined by those degrees of freedom and in turn directly affects electronic, magnetic and optical properties of the material. Typically, tunability of the bandgap in an oxide insulator can be achieved through chemical doping,[6] which is important for electronic and photonic device applications. Here we report large bandgap enhancement in SrTiO3 (STO) thin films, which can be up to 20% greater than the bulk value, depending on the deposition temperature. There is no significant change in density and cationic ratio of the oxide so the effect is attributed to Sr/Ti antisite defects, an attribution supported by density functional theory calculations. It was found that the bandgap enhancement significantly changes the electronic and magnetic phases in the oxygen-vacancy-induced two-dimensional electron gas at the interface between amorphous LaAlO3 (LAO) and STO. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO thin films are difficult to convert into metals by oxygen vacancy doping

Absence of giant spin splitting in the two-dimensional electron liquid at the surface ofSrTiO3(001)

Physical Review B, 2016

We reinvestigate the putative giant spin splitting at the surface of SrTiO3 reported by Santander-Syro et al. [Nature Mat. 13, 1085 (2014)]. Our spin-and angle-resolved photoemission experiments on (001) oriented surfaces supporting a two-dimensional electron liquid with high carrier density show no detectable spin polarization in the photocurrent. We demonstrate that this result excludes a giant spin splitting while it is fully consistent with the unconventional Rashba-like splitting seen in band structure calculations that reproduce the experimentally observed ladder of quantum confined subbands.

Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO3/SrTiO3 interface

Journal of Physics: Condensed Matter, 2021

We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO3/SrTiO3 interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers after illumination leads to quantum oscillations in the magnetoresistance originating from the Landau quantization. The carrier density (∼2 × 1012 cm−2) and effective mass (∼1.7m e) estimated from the oscillations suggest that the high-mobility electrons occupy the d xz/yz subbands of Ti:t2g orbital extending deep within the conducting sheet of SrTiO3. Our results demonstrate that the illumination which induces additional carriers at the interface can pave the way to control the Kondo-like scattering and study the quantum transport in the complex oxide heterostructures.

Intrinsic origin of two-dimensional electron gas at the (001) surface of SrTiO 3

Physical Review B, 2015

The predictions of the polar catastrophe scenario to explain the occurrence of a metallic interface in heterostructures of the solid solution(LaAlO3)x(SrTiO3)1−x (LASTO:x) grown on (001) SrTiO3 were investigated as a function of film thickness and x. The films are insulating for the thinnest layers, but above a critical thickness, tc, the interface exhibits a constant finite conductivity which depends in a predictable manner on x. It is shown that tc scales with the strength of the built-in electric field of the polar material, and is immediately understandable in terms of an electronic reconstruction at the nonpolar-polar interface. These results thus conclusively identify the polarcatastrophe model as the intrinsic origin of the doping at this polar oxide interface. arXiv:1112.3532v1 [cond-mat.mtrl-sci]