GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes (original) (raw)

Materials Science in Semiconductor Processing, 2016

Abstract

Abstract GaInN/GaN solar cells made without p-type material are demonstrated using an oxidized Ni/Au Schottky barrier design to collect photo-generated carriers. The best devices exhibit a short-circuit current density of 0.065 mA/cm2 with an open-circuit voltage of 0.4 V under AM0 (1-Sun) illumination. Preliminary computer simulations are in reasonable agreement with experimental results, giving a pathway to improve device performance via iterative redesign and testing.

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