Laser annealing of silicon islands (original) (raw)

SPIE Proceedings, 1992

Abstract

Laser recrystalization on silicon dioxide polysilicon islands by pulsed laser radiation has been carried out. As a result of laser treatment single-crystalline layers have been produced which were investigated by means of translucent electron microscopy. It has been shown that the solution obtained for temperature distribution can be expressed via elliptical Jacoby sine. The n-channel metal-dielectric-semiconductor transistors with electric parameters

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