Red Organic Light-Emitting-Diodes based on a N-Annulated Perylene Diimide Dimer (original) (raw)
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Advanced Materials Letters, 2011
The mechanism of energy transfer leading to electroluminescence (EL) of a lanthanide complex, Eu x Y (1-x) (TTA) 3 Phen (TTA= thenoyltrifluoro-acetone, phen=1,10-phenanthroline), doped into TPBi(1,3,5-tris(N-Phenyl-benzimidizol-2-yl) benzene host at 15 wt% of host is investigated. With the device structure of anode/hole transport layer/Eu x Y (1-x) (TTA) 3 Phen (15%): TPBi/electron transport layer/cathode, maximum luminescence of 185.6 cd/m 2 and 44.72 cd/m 2 was obtained from device I made of Eu 0.4 Y 0.6 (TTA) 3 Phen and device II made of Eu 0.5 Y 0.5 (TTA) 3 Phen, respectively at 18 volts. Saturated red Eu 3+ emission based on 5 D 0 → 7 F 2 transition is centered at a wavelength of 612 nm with a full width at half maximum of 5 nm. From the analysis of I-V, J-V-L characteristics and electroluminescent (EL) spectra, we conclude that direct trapping of holes and electrons and subsequent formation of the excitation occur on the dopant, leading to high quantum efficiencies at low current densities. These results show that fabricated OLED devices can successfully emit saturated red light and can be used in applications such as opto-electronic OLED devices, displays and solid state lighting technology.
Non-doped red organic light-emitting diodes
Journal of Materials Chemistry, 2004
A convenient and improved procedure has been developed for preparing the red fluorophore N-methyl-bis(4-(N-(1-naphthyl)-N-phenylamino)phenyl)maleimide (NPAMLMe) through the efficiently synthesized bis(4bromophenyl)fumaronitrile, the necessary precursor in preparing NPAMLMe. This allows NPAMLMe to be an easily accessible material compared with other known red, organic light-emitting diode (OLED) materials. We also report an unusual approach in fabricating red OLEDs, which does not adopt a conventional red dopant but rather NPAMLMe as the host red emitter. The performance of the non-doped red devices has been studied in depth for the first time. Devices with varied layer thickness were fabricated for examining the compatibility of NPAMLMe with commonly known materials, electron-transporting tris(8hydroxyquinolinolato)aluminium (Alq 3 ) and hole-transporting 4,4'-bis(4-(N-(1-naphthyl)-Nphenylamino)phenyl)biphenyl (NPB). In the presence of a hole-blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10phenanthroline (BCP), the devices emit pure red electroluminescence (EL), and it is essentially voltageindependent. Red EL with a brightness near 4600 cd m 22 and an external quantum efficiency as high as 1.6% has been achieved. The performance of such non-doped, red OLEDs is comparable with or better than contemporary, dopant-based, red OLEDs, and the simple fabrication is the advantage of the approach.
Red organic light emitting device based on TPP and a new host material
Applied Physics A, 2013
A novel coating method for fabrication of red OLEDs by using a new host material has been developed with the aid of a single furnace. The host material, zinc complex, was prepared from the reaction of zinc acetate and 2-methyl-8-hydroxyquinoline and after characterization by UV-vis, FT-IR, and 1 H NMR spectroscopes was used as an emitting material in the fabrication of OLEDs. Since meso-tetraphenylporphyrin (TPP) and zinc complex have a close molecular weight, both materials were evaporated from a single furnace. Devices with TPP and structures of ITO/PEDOT:PSS (55 nm)/PVK (90 nm)/zinc complex:TPP (65 nm)/Al (180 nm) were fabricated; Without TPP green and with TPP red emission was achieved. The device with 2 % TPP that doped into the zinc complex showed the purest red emission among all devices. The device showed the CIE coordinates of 0.70 and 0.28 at 14 V and a maximum luminance of about 94.2 cd/m 2. This new method is a promising candidate for fabrication of low cost red OLEDs with a more homogeneous layer.
Current Applied Physics, 2009
The effect of tetrabutylammonium hexafluorophosphate (TBAPF 6) doping on the electrical and electroluminescence properties of single-layer polymer light emitting diodes (PLEDs) with ITO/PVK:PBD/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as polymeric host, 2-(4biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule and aluminium (Al) as cathode. The emitting layers were spin-coated onto the ITO-coated glass substrates. It was found that the doped devices underwent transition at the first voltage scan where the current increased drastically at certain voltage. After the transition, the threshold voltage for current injection as well as the light emission decreased significantly as compared to undoped device. The turn on voltage of the doped device was 5 V. The significant improvement was attributed to the reduction of both electron and hole injection energy barriers caused by accumulation of ionic species at the interface. In conclusion, doping of TBAPF 6 has been shown to be a valuable approach to reduce the turn-on voltage and increase the EL intensity of PLEDs.
Nanomaterials
Obtaining white light from organic LEDs is a considerable challenge and, to realize white light emission, many studies have been conducted, primarily addressing two- or three-color blend systems as a promising strategy. In this work, pristine films, grown by spin coating, consisting of commercial blue Poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO), green Poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT), and red spiro-copolymer (SPR) light-emitting materials, were studied as reference materials. Afterward, binary (SPR doped in host PFO) and ternary (SPR and F8BT doped in host PFO) thin films were successfully prepared with various ratios. The characterization of the as-grown and thermally-treated blend films was focused on their optical and photophysical properties. After, the fabrication of OLED devices on glass substrates was carried out for the evaluation of a blend’s composition and annealing in terms of the devices’ electrical characteristics and electro-emission properties i...