Field effect on optical recombination in Si/SiGe quantum heterostructures having U, W and M type II potential designs (original) (raw)

Materials Science and Engineering: B, 2005

Abstract

We report on optoelectronic properties of devices based on Si/Si1−xGex systems. To limit the inherent problems of the type II character and the indirect nature of the bandgap, we propose Si/Si1−xGex strained QWs embedded in relaxed Si1−yGey barriers. The conduction and the valence band present a W-, Usami- or M-like potential profile with a quasi-type I heterostructures. Based on Schrödinger

Sfina Noureddine hasn't uploaded this paper.

Let Sfina know you want this paper to be uploaded.

Ask for this paper to be uploaded.