Impurities on graphene: Midgap states and migration barriers (original) (raw)
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This review examines the properties of graphene from an experimental perspective. The intent is to review the most important experimental results at a level of detail appropriate for new graduate students who are interested in a general overview of the fascinating properties of graphene. While some introductory theoretical concepts are provided, including a discussion of the electronic band structure and phonon dispersion, the main emphasis is on describing relevant experiments and important results as well as some of the novel applications of graphene. In particular, this review covers graphene synthesis and characterization, field-effect behavior, electronic transport properties, magneto-transport, integer and fractional quantum Hall effects, mechanical properties, transistors, optoelectronics, graphene-based sensors, and biosensors. This approach attempts to highlight both the means by which the current understanding of graphene has come about and some tools for future contributions.
Nano Letters, 2008
Graphene, a one-atom thick zero gap semiconductor , has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics to ballistic transport under ambient conditions . The latter makes graphene a promising material for future electronics and the recently demonstrated possibility of chemical doping without significant change in mobility has improved graphene's prospects further . However, to find optimal dopants and, more generally, to progress towards graphene-based electronics requires understanding the physical mechanism behind the chemical doping, which has been lacking so far. Here, we present the first joint experimental and theoretical investigation of adsorbates on graphene. We elucidate a general relation between the doping strength and whether or not adsorbates have a magnetic moment: The paramagnetic single NO 2 molecule is found to be a strong acceptor, whereas its diamagnetic dimer N 2 O 4 causes only weak doping. This effect is related to the peculiar density of states of graphene, which provides an ideal situation for model studies of doping effects in semiconductors. Furthermore, we explain recent results on its "chemical sensor" properties, in particular, the possibility to detect a single NO 2 molecule [13].
Experimental review of graphene
2011
This review examines the properties of graphene from an experimental perspective. The intent is to review the most important experimental results at a level of detail appropriate for new graduate students who are interested in a general overview of the fascinating properties of graphene. While some introductory theoretical concepts are provided, including a discussion of the electronic band structure and phonon dispersion, the main emphasis is on describing relevant experiments and important results as well as some of the novel applications of graphene. In particular, this review covers graphene synthesis and characterization, field-effect behavior, electronic transport properties, magneto-transport, integer and fractional quantum Hall effects, mechanical properties, transistors, optoelectronics, graphene-based sensors, and biosensors. This approach attempts to highlight both the means by which the current understanding of graphene has come about and some tools for future contributions.
Device Chemistry of Graphene Transistors
Cornell University - arXiv, 2019
Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on a mass scale, then it must be compatible with existing semiconductor industry fabrication processes. Unfortunately, such processing introduces defects and impurities to the graphene, which cause scattering of the charge carriers and changes in doping level. Scattering results in degradation of electrical performance, including lower mobility and Dirac point shifts. In this paper, we review methods by which to mitigate the effects of charged impurities and defects in graphene devices. Using capping layers such as fluoropolymers, statistically significant improvement of mobility, on/off ratio, and Dirac point voltage for graphene FETs have been demonstrated. These effects are also reversible and can be attributed to the presence of highly polar groups in these capping layers such as carbon-fluoride bonds in the fluoropolymer acting to electrostatically screen charged impurities and defects in or near the graphene. We also review the effects of other types of capping materials such as self-assembled monolayers and also gaseous species such as ammonia. In other experiments, graphene FETs were exposed to vapourphase, polar, organic molecules in an ambient environment. This resulted in significant improvement to electrical characteristics, and the magnitude of improvement to the Dirac point scaled with the dipole moment of the delivered molecule type. This type of experimental data is supported by recent theoretical work, wherein the interactions of polar molecules with impurities such as charged ions or adsorbed water on a graphene surface were simulated. The potential profile produced in the plane of the graphene sheet by the impurities was calculated to be significantly reduced by the presence of polar molecules. We present strong evidence that the polar nature of capping layers or polar vapour molecules introduced to the surface of a graphene FET act to mitigate detrimental effects of charged impurities/defects.
Electric Field Effects on Graphene Materials
Carbon Materials: Chemistry and Physics, 2015
Understanding the effect of electric fields on the physical and chemical properties of two-dimensional (2D) nanostructures is instrumental in the design of novel electronic and optoelectronic devices. Several of those properties are characterized in terms of the dielectric constant which play an important role on capacitance, conductivity, screening, dielectric losses and refractive index. Here we review our recent theoretical studies using density functional calculations including van der Waals interactions on two types of layered materials of similar two-dimensional molecular geometry but remarkably different electronic structures, that is, graphene and molybdenum disulphide (MoS 2). We focus on such two-dimensional crystals because of they complementary physical and chemical properties, and the appealing interest to incorporate them in the next generation of electronic and optoelectronic devices. We predict that the effective dielectric constant (ε) of few-layer graphene and MoS 2 is tunable by external electric fields (E ext). We show that at low fields (E ext < 0.01 V/Å) ε assumes a nearly constant value ∼4 for both materials, but increases at higher fields to values that depend on the layer thickness. The thicker the structure the stronger is the modulation of ε with the electric field. Increasing of the external field perpendicular to the layer surface above a critical value can drive the systems to an unstable state where the layers are weakly coupled and can be easily separated. The observed dependence of ε on the external field is due to charge polarization driven by the bias, which show several similar characteristics despite of the layer considered. All these results provide key information about control and
Georgakilas/Functionalization Of Graphene, 2014
Carbon takes its name from the latin word carbo meaning charcoal. This element is unique in that its unique electronic structure allows for hybridization to build up sp 3 , sp 2 , and sp networks and, hence, to form more known stable allotropes than any other element. The most common allotropic form of carbon is graphite which is an abundant natural mineral and together with diamond has been known since antiquity. Graphite consists of sp 2 hybridized carbon atomic layers which are stacked together by weak van der Waals forces. The single layers of carbon atoms tightly packed into a two-dimensional (2D) honeycomb crystal lattice is called graphene. This name was introduced by Boehm, Setton, and Stumpp in 1994 [1]. Graphite exhibits a remarkable anisotropic behavior with respect to thermal and electrical conductivity. It is highly conductive in the direction parallel to the graphene layers because of the in-plane metallic character, whereas it exhibits poor conductivity in the direction perpendicular to the layers because of the weak van der Waals interactions between them [2]. The carbon atoms in the graphene layer form three σ bonds with neighboring carbon atoms by overlapping of sp 2 orbitals while the remaining p z orbitals overlap to form a band of filled π orbitals-the valence band-and a band of empty π* orbitals-the conduction band-which are responsible for the high in-plane conductivity. The interplanar spacing of graphite amounts to 0.34 nm and is not big enough to host organic molecules/ions or other inorganic species. However several intercalation strategies have been applied to enlarge the interlayer galleries of graphite from 0.34 nm to higher values, which can reach more than 1 nm in some cases, depending on the size of the guest species. Since the first intercalation of potassium in graphite, a plethora of chemical species have been tested to construct what are known as graphite intercalation compounds (GICs). The inserted species are stabilized between the graphene layers through ionic or polar interactions without influencing the graphene structure. Such compounds can be formed not only with lithium, potassium, sodium, and other alkali metals, but also with anions such as nitrate, bisulfate, or halogens.