Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices (original) (raw)

Materials Science Forum, 2017

Abstract

An analytical tool to design 4H-SiC power vertical Double-diffused Metal-Oxide-Semiconductor Field-Effect-Transistor is proposed. The model optimizes, in terms of the doping concentration in the Drift–region, the trade–off between the ON–resistance, RON, and the maximum blocking voltage, VBL, that is the Drain-Source voltage for which the avalanche breakdown appears at the p+–well/n-DRIFT junction together with the breakdown of the Gate oxide. Finding such trade-off means to maximize, Figure-Of-Merit. Our results are based on a novel full–analytical model of the electric field in the Gate oxide, EOX, whose generality is ensured by the absence of fitting and empirical parameters. Model results are successfully compared with 2D–simulations covering a wide range of device performances.

Gian Domenico Licciardo hasn't uploaded this paper.

Let Gian Domenico know you want this paper to be uploaded.

Ask for this paper to be uploaded.