Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications (original) (raw)

2008

Abstract

This work is the first step of a study of antireflecting and passivating properties of Hydrogenated Silicon Nitride films (SiNx:Hy) made with a new atmospheric pressure PECVD process. Photovoltaic properties are correlated with physico-chemical ones. Films are deposited with a laboratory scale system of Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD) using Ar, SiH4 and NH3 gas mixtures. According to experimental parameters such as the ammonia to silane ratio and the substrate temperature, the surface passivation is determined on FZ silicon wafer by photoconductance decay measurements. The evolution during the days following the deposit realization is also studied. The refractive index and the extinction coefficient are determined from ellipsometry measurements. The chemical composition of the SiNx:Hy is studied by Fourier Transformed InfraRed spectroscopy (FTIR), Secondary Ion Mass Spectroscopy (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Elastic Rec...

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