Multi-subband monte carlo modeling of nano-mosfets with strong vertical quantization and electron gas degeneration (original) (raw)

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Abstract

This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The simulator is two-dimensional in real space and in k-space, and accounts for the electron gas degeneracy in the k-plane. Simulations of thin-film SOI MOSFETs show that the subband structure and the carrier degeneracy strongly affect the transport properties particularly the injection velocity. Our results

Leonardo Lucci hasn't uploaded this paper.

Let Leonardo know you want this paper to be uploaded.

Ask for this paper to be uploaded.