Structural, Electrical and Dielectrical Property Investigations of Fe-Doped BaZrO3 Nanoceramics (original) (raw)

2016, Journal of Electronic Materials

Nanocrystalline samples of BaZr 1Àx Fe x O 3 (x = 0.0, 0.05, 0.10, 0.20, 0.30, 0.40 and 0.50) ceramics were synthesized by the wet chemical sol-gel auto combustion method. The perovskite structured cubic phase formation of BaZr 1Àx Fe x O 3 samples was confirmed by x-ray diffraction (XRD) data analysis. Various structural parameters such as lattice constant (a), unit cell volume (V), x-ray density (q x), and porosity (P) were determined using XRD data. The lattice constant (a), x-ray density (q x) and porosity (P) decrease with an increase in Fe content x. The average particle size was calculated by using the Debye-Scherer's formula using XRD data and was 9-18 nm. The microstructural studies were investigated through scanning electron microscopy technique. Compositional stoichiometry was confirmed by energy dispersive spectrum analysis. The direct current electrical resistivity studies of the prepared samples were carried out in the temperature range of 343-1133 K using a standard two-probe method. The electrical conductivity (r) increases with temperature and Fe concentration. The dielectric parameters such as dielectric constant (e¢) and loss tangent (tan d) were measured with frequency at room temperature in the frequency range 50 Hz to 5 MHz. The dielectric parameters show strong compositional as well as frequency dependences. The dielectric parameters were found to be higher at lower frequency.

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Effect of Temperature on Dielectric Parameters of Ferroelectric Materials at Microwave Frequency

Advanced Materials Research, 2022

The composite materials of ST & BT ceramics were prepared by using solid state reaction method. The dielectric parameters of ST & BT ceramics of particle size 125 micron like dielectric constant (ε'), loss (ε"), quality factor (QxF), relaxation time (τ) and conductivity (σ) has been studied at different temperatures i.e. -10°C, +10°C, +30°C and +50°C. the values of dielectric parameters are found greeter of ST then BT but the relaxation time of ST is found smaller than BT.

Structural, microstructural and dielectric properties of Ba1-xLaxTi1-x/4 O3 prepared by sol gel method

Journal of Advanced Dielectrics, 2019

Detailed structural and dielectric properties of Lanthanum-doped barium titanate Ba 1Àx La x Ti ð1Àx=4Þ O 3 ceramic powders BLTx (where x ¼ 0:00; 0.10; 0.20; 0.30 and 0.40)/BT, BLT10, BLT20, BLT30 and BLT40, synthesized by the sol gel process, calcined at 900 ○ C for 3 h and sintered at 1250 ○ C for 6 h, have been investigated. The phase formation and crystal structure of the samples were checked by X-ray diffraction (XRD) and Raman spectroscopy. The samples crystallize in the pure perovskite structure that transforms from tetragonal to pseudocubic under doping with La; results that have been confirmed by Rietveld Refinement technique. The estimated average crystallite size of the samples was about 23 nm. Dielectric parameters (dielectric permittivity and losses) were determined in the temperature range room temperature (RT)-280 ○ C and in the frequency range 500 Hz-2 MHz. La doping gives rise to a strong decrease of the ferro-to-paraelectric transition temperature, and the frequency dependence of the permittivity shows that the samples with x ¼ 0:00 and x ¼ 0:10 reach their resonance frequency. The frequency dependence of impedance and electric modulus properties were studied over a wide frequency range from 1 kHz to 2 MHz at various temperatures to confirm the contributions from grains and grain-boundaries. The complex impedance analysis data have been presented in the Nyquist plot which is used to identify the corresponding equivalent circuit and fundamental circuit parameters; it was found that the grain boundaries resistance is dominant at room temperature. The frequency dependence of the parameters permittivity, losses and AC conductivity reveals that the relaxation process is of the Maxwell-Wagner type of interfacial polarization.

Intrinsic dielectric and spectroscopic behavior of perovskite Ba(Ni1∕3Nb2∕3)O3–Ba(Zn1∕3Nb2∕3)O3 microwave dielectric ceramics

Journal of Applied Physics, 2007

Ceramics of 0.35Ba͑Ni 1/3 Nb 2/3 ͒O 3-0.65Ba͑Zn 1/3 Nb 2/3 ͒O 3 were prepared by the mixed oxide route. The effect of the cooling rate ͑2°C-240°C/h͒ after sintering on the microwave dielectric properties of the ceramics was examined. While the extrinsic factors, such as porosity and secondary phases, markedly influence the dielectric properties in the low-frequency regime, they have minimal effect on these properties in the high-frequency regime. The mechanisms involved in modifying the high-frequency dielectric properties of the materials were investigated by Fourier transform infrared and Raman spectroscopy, in conjunction with the Rietveld analysis of x-ray diffraction ͑XRD͒ spectra. A reduction in the cooling rate after sintering results in an increase in the high-frequency Q ϫ f ͑product of dielectric Q value and measurement frequency͒ from 42 to 58 THz in the high-frequency regime ͑ϳ1.5 THz͒. Such behavior correlates very well with the increase in the B-site occupancy by Nb ͑deduced from the Rietveld analyses of XRD spectra͒ and the increase in the coherency of the lattice vibration ͑deduced from the reduction in the full-width-athalf-maximum of the A 1g ͑O͒ Raman mode͒. In contrast, the cooling rate after sintering has very limited effect on the relative permittivity ͑varying from 40.8 to 41.9 at 1.5 THz͒, which is in accord with the phenomenon that the cell volume and the Raman shift of A 1g ͑O͒ Raman mode are essentially independent of the cooling rate.

Effect of processing on dielectric properties of (0.95)PbZr0.52Ti0.48O3–(0.05)BiFeO3

Applied Physics A, 2013

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Dielectric properties

2017

Key words Thin films samples of Bismuth sulfide Bi 2 S 3 had deposited on glass substrate using thermal evaporation method by chemical method under vacuum of 10-5 Toor. XRD and AFM were used to check the structure and morphology of the Bi 2 S 3 thin films. The results showed that the films with law thickness <700 nm were free from any diffraction peaks refer to amorphous structure while films with thickness≥700 nm was polycrystalline. The roughness decreases while average grain size increases with the increase of thickness. The A.C conductivity as function of frequency had studied in the frequency range (50 to 5x10 6 Hz). The dielectric constant, polarizability showed significant dependence upon the variation of thickness.

Structural and Dielectric Characteristics in (1− x )Ba(Ni 1/2 W 1/2 )O 3 - x BaTiO 3 Perovskite Solid Solutions

Journal of the American Ceramic Society, 2010

Crystal structure and dielectric properties of perovskite ceramics in (1Àx)Ba(Ni 1/2 W 1/2)O 3-xBaTiO 3 (x 5 0-0.9) solid solution system have been investigated. The crystal structure of the ceramics changed with the composition of solid solutions. The cubic double pervoskite structure with the space group of Fm 3m was formed for the compositions of xr0.15. When 0.45rxr0.55, the samples had the h-BaTiO 3-type hexagonal perovskite structure with the space group of P6 3 /mmc and they changed to the cubic perovskite structure of Pm 3mas x exceeded 0.7. A cubic-to-hexagonal phase transition occurred in the composition range from x 5 0.15 to 0.45. A low-frequency dielectric dispersion was found in the mixed-phase region of double cubichexagonal perovskites. A polar cluster model which was responsible for the formation of the hexagonal phase was suggested from a charge-hopping mechanism between B-site cations in the perovskite lattice. This model was then proved by X-ray photoelectron spectroscopy analysis, Raman spectra, and highresolution transmission electron microscopy observation, respectively. The dense ceramics in the present system with 0.05rxr0.55 have good microwave dielectric properties with s f of o|À15| ppm/1C, e r of 20-25, and Q Â f value of 30 000-50 000 GHz.

Dielectric characterization of materials at microwave frequency range

Materials Research, 2003

In this study a coaxial line was used to connect a microwave-frequency Network Analyzer and a base moving sample holder for dielectric characterization of ferroelectric materials in the microwave range. The main innovation of the technique is the introduction of a special sample holder that eliminates the air gap effect by pressing sample using a fine pressure system control. The device was preliminary tested with alumina (Al 2 O 3) ceramics and validated up to 2 GHz. Dielectric measurements of lanthanum and manganese modified lead titanate (PLTM) ceramics were carried out in order to evaluate the technique for a high permittivity material in the microwave range. Results showed that such method is very useful for materials with high dielectric permittivities, which is generally a limiting factor of other techniques in the frequency range from 50 MHz to 2 GHz.

Giant suppression of dielectric loss in BaZrO3

Journal of the European Ceramic Society, 2019

We report the effect of precursor's purity and heterovalent substitution on the microstructure and dielectric properties of BaZrO3 ceramics. We find that independent of the purity or raw materials, the dielectric loss of BaZrO3 at microwave frequencies is rather high with a Q factor in the range of 1000-3000 at 10 GHz. All stoichiometric ceramics studied show up to three types of low-T dielectric relaxations in the 2-250 K range. All these dielectric anomalies can be suppressed by partial substitution of Zr for Nb. By alloying of BaZrO3 with a hypothetical BaGa 1/2 Nb 1/2 O3 phase the Q×f value of ceramics at microwave frequency can be improved significantly. The origin of this remarkable improvement is attributed to the effect of the donor ions on the random electric fields and antiferrodistortive instability. Ceramic with a chemical composition of BaZr0.96Ga0.02Nb0.02O3 sintered at 1600 • C shows dielectric constant, ε ′ = 36.7, temperature coefficient of the resonance frequency, τ f = +110 ppm/ • C and Q×f = 172 THz.

Correlation Between Microstructure and Impedance Properties.docx

Homogenization effects The rate of solid state reaction and phases in the powders is very sensitive to the reactants, the temperature, and the synthesis conditions. So there are so many articles about these conditions in the literature. However, homogenization medium effect on electrical properties of BaTiO3 ceramics produced by solid state reaction method has not been investigated. Aim BaCO3 and TiO2 reagents were mixed in distilled water, methanol, and acetone to investigate the effects of the homogenization medium on the impedance properties. Materials and methods Materials and methods: BaCO3 and TiO2 reagents with the purity better than 99.5 % are homogenized in distilled water, methanol and acetone. BaTiO3 ceramics are produced by solid state reaction method.. Dielectric measurement: The complex impedance measurements of samples were carried out using high-performance dielectric/impedance spectrometer with ZGS Active Sample Cell at oscillation amplitude of 1V in a wide frequency range of 100 mHz- 20 MHz at room temperature. WinDETA Novocontrol software was used for data analysis. Results Complex permittivity, complex impedance, resistivity and complex electric modulus of the ceramics were studied by the dielectric spectrometer in a wide frequency range of 100 μHz- 20 MHz at room temperature. The complex impedance and complex electric modulus showed that the materials have a relaxation time with different mean time constant called Maxwell-Wagner-Sillars (MWS) type relaxation. Conclusion Minimum dielectric loss is found the ceramic that its reagents homogenized in distilled water, which is very important for many electronic applications. The complex permittivity and resistivity measurements showed that using water instead of acetone and methanol has a positive effect with small loss on electrical properties of barium titanate ceramics.

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The Effect of Dopants on the Dielectric Properties of Ba(B' 1/2Ta1/2)O3 (B'=La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb, and In) Microwave Ceramics