InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz (original) (raw)
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IEEE Transactions on Electron Devices, 2018
We report on the realization of transferredsubstrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-µm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies. Index Terms-Gallium arsenide antimonide, heterojunction bipolar transistors, indium phosphide, millimeterwave (mm-wave) integrated circuits, submillimeter-wave (sub-mm-wave) integrated circuits.
DEVELOPMENT OF THZ TRANSISTORS AND (300-3000 GHZ) SUB-MM-WAVE INTEGRATED CIRCUITS
2000
We examine the feasibility of developing bipolar transistors with power-gain cutoff frequencies of 1-3 THz. High bandwidths are obtained by scaling; the critical limits to such scaling are the requirements that the current density increase in proportion to the square of bandwidth and that the metalsemiconductor contact resistivities vary as the inverse square of device bandwidth. Transistors with 755 GHz max f and 324 GHz amplifiers have been demonstrated. Transistors with target max f over 1 THz are in development.
InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz
IEEE Journal of Solid-State Circuits, 2000
We report on the development of a 0.25-m InP HBT IC technology for lower end of the THz frequency band (0.3-3 THz). Transistors demonstrate an extrapolated of 800 GHz while maintaining a common-emitter breakdown voltage (BVCEO) 4 V. The transistors have been integrated in a full IC process that includes three-levels of interconnects, and backside processing. The technology has been utilized for key circuit building blocks (amplifiers, oscillators, frequency dividers, PLL, etc), all operating at 300 GHz.
InP HBTs for THz frequency integrated circuits
2011
A 0.25μm InP DHBT process has been developed for THz frequency integrated circuits. A 0.25×4μm2 HBT exhibits an extrapolated ft/fmax of 430GHz/1.03THz at IC=11mA, VCE=1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BVCEO)>;4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build fundamental oscillators, amplifiers and dynamic frequency dividers all operating at >;300GHz. Additionally, increasingly complex circuits such as a full PLL have been demonstrated.
InP HBT Technologies for THz Integrated Circuits
Proceedings of the IEEE, 2017
A 0.25m InP DHBT process has been developed for THz frequency integrated circuits. A 0.25x4m 2 HBT exhibits an extrapolated f t /f max of 430GHz/1.03THz at I C =11mA, V CE = 1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BV CEO) >4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build fundamental oscillators, amplifiers and dynamic frequency dividers all operating at >300GHz. Additionally, increasingly complex circuits such as a full PLL have been demonstrated.
Sensors, 2019
This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are being built using bulky and expensive technologies such as Schottky diode detectors and lasers, as well as using some emerging detection methods. Meanwhile, a considerable amount of research effort has recently been invested in process development and modeling of transistor technologies capable of amplifying in the terahertz band. Indium phosphide (InP) transistors have been able to reach maximum oscillation frequency (fmax) values of over 1 THz for around a decade already, while silicon-germanium bipolar complementary metal-oxide semiconductor (BiCMOS) compatible heterojunction bipolar transistors have only recently crossed the fmax = 0.7 THz mark. While it seems that the InP technology could be the ultimate terahertz technology, according...
Transconductance Degradation in Near-THz InP Double-Heterojunction Bipolar Transistors
IEEE Electron Device Letters, 2000
We examine the relationship between transconductance g m and emitter current density J E for InP/InGaAs/InP abrupt emitter-base (EB) double-heterojunction bipolar transistors operating at high J E . High J E is needed to increase g m for reduced C/g m delays. We observe a significant degradation in measured g m below qI E /kT with increased J E . This degradation primarily results from the Fermi-Dirac statistics governing current injection at high current densities and from quantum-mechanical reflection at the EB junction arising from changes in the electron effective mass and in the conduction band potential. Transconductance is further reduced by gradients in the quasi-Fermi level in the EB space-charge region and by modulation of the heterointerface energy barrier by the applied bias.
Submicron lateral scaling of HBTs and other vertical-transport devices:towards THz bandwidths
2000
With appropriate device structures, bined lithographi and epitaxial scaling of HBTs,RTDs and S hottky diodes results in rapid in reases in device bandwidths.0.1 ¹m InGaAs RTDs have os illated at 650 GHz,Submi ron heterojunction bipolar sistors (HBTs)fabri ated with substrate transfer pro-esses have obtained 21 dB unilateral power gain at 100 GHz;if extrapolated at -20 dB/decade,this corresponds to a 1.1 THz power-gain uto ®frequency.HBT current-gain uto ®frequencies as high as 300 GHz have been obtained.
Recent progress and prospects of terahertz CMOS
IEICE Electronics Express, 2015
Recent progress and prospects of terahertz CMOS integrated circuits is reviewed. The development of terahertz CMOS is somewhat different from the conventional digital and RF CMOS evolution, in that it is not fueled as much by technology scaling. Rather, the key enablers are progress in high-frequency device characterization and modeling techniques and also in design techniques near transistor's active operation limit, f max .
Towards terahertz operation of CMOS
2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2009
The electromagnetic spectrum between 300GHz and 3THz is broadly referred as terahertz . The utility of this portion of spectrum for detection of chemicals and bio agents, for imaging of concealed weapons, cancer cells and manufacturing defects , and for studying chemical species using electron paramagnetic resonance, as well as, in short range radars and secured high data rate communications has been demonstrated. However, high cost and low level of integration for III-V devices needed for the systems have limited their wide use. The improvements in the high frequency capability of CMOS have made it possible to consider CMOS as a lower cost alternative for realizing the systems that can greatly expand the use of this spectrum range.