Relationship between photovoltaic and diode characteristic parameters in the Sn/p-Si Schottky type photovoltaics (original) (raw)

In order to investigate relationship between photovoltaic and diode characteristic parameters, we fabricated four kinds of samples of Sn/p-Si Schottky type photovoltaics using surface treatment by anodic oxidation and chemical etching method. Diode and photovoltaic characteristics of the samples were determined from the current-voltage measurements performed in dark and under illumination. Etching time of front surface of the p-Si substrate in HF solution used in the fabrication of Sn/p-Si Schottky type photovoltaics was found to be very influential on diode and photovoltaic parameters. Especially, an etching time of 30 s showed a positive effect both on diode and photovoltaic characteristic parameters. It was also observed that the characteristic parameters of the samples were affected negatively depending on the over-etching time. More importantly, a close relationship between photovoltaic parameters (fill factor, conversion efficiency) and diode parameters (ideality factor, series resistance) was observed.