Structural Properties of Sn-Doped Nanowires by Thermal Evaporation Method (original) (raw)
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The structural properties of Sn-doped zinc oxide synthesized by hot-tube thermal evaporation
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The growth of Sn:ZnO nanowires on a silicon substrate using a low thermal evaporation method is reported. A horizontal quartz tube with controlled supply of O 2 gas were used to fabricate the samples where Zn and Sn metal powders were previously mixed and heated at 500°C. This allows the reactant vapours to deposit onto the substrate, which placed at a certain distance from the source materials. The samples were characterized using FESEM, EDX and HRTEM measurements. Randomly oriented nanowires were formed with varying dopant concentrations from 3 to 15 at%. It was observed that from FESEM images, when the dopant concentrations were increased, a hexagonal rod with a wire extended at its end was clearly formed and the best images of nanowires were shown at the highest concentration of 15 at% measuring between 26 to 35 nm and roughly 500 nm in diameter and length respectively. The doping process played an important role in order to alter the morphological properties of Sn:ZnO nanowires. Sn:ZnO nanowires have large potential in many applications such as in selected sensor technology including gaseous sensors, liquid sensors and others.
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JURNAL FIZIK MALAYSIA
The thin film of ZnO nanowire and Sn-doped ZnO nanobelt were fabricated through physical vapor deposition (PVD) technique on Si (111) substrate. X-ray Diffaction (XRD) and Energy Dispersive X-ray (EDX) studies demonstrated that there are significant change in crystal structure and content of the elements as the nano structures change from nanowire to nanobelt when the ZnO thin film was doped with Sn. The morphological change in the shape of the nanostructure from nanowire to nanobelt and to nanoring can be observed from the Field Effect Scanning Electron Microscopy (FESEM) images. The high polarity of Sndoped ZnO has caused the formation of the spiral structure in the nanostructure of the ZnO thin film.
Thermal Evaporation Synthesis, Optical and Gas-Sensing Properties of ZnO Nanowires
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The purpose of this study is to synthesize and explore the relationship between the optical properties and gas-sensing performance of ZnO nanowires (NWs). Well-aligned ZnO nanowire (NW) arrays were synthesized on a silicon substrate using the thermal evaporation method without any catalyst or additive. The structures, surface morphologies, chemical compositions, and optical properties of the products were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) together with energy-dispersive spectroscopy (EDS), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectroscopy, and their gas-sensing properties for NO2 were examined. The results showed that single-crystalline ZnO NWs with high density grow uniformly and vertically on a Si substrate. The FESEM and TEM images indicate that ZnO NWs have an average diameter of roughly 135–160 nm with an average length of roughl...
Korean Journal of Chemical Engineering, 2006
Synthesis of ZnO nanowires was achieved on Si(100) substrate by the thermal evaporation of high purity metallic zinc powder without the use of any metal catalyst or additives. The diameter and length of the as-grown nanowires were in the range of 20–35 nm and few micrometers, respectively. The shapes and sizes of ZnO nanowires were dependent on the growth time. The high resolution transmission electron microscopy and selected area electron diffraction patterns indicated that the as-grown products are single crystalline with wurtzite hexagonal phase. Room temperature photoluminescence studies exhibited a strong UV emission and a suppressed green emission, confirming the good optical properties for the deposited nanowires.
Growth and Characterization of ZnO nanowires for various Sensor Applications
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In the present work, cerium oxide CeO 2 nanoparticles were synthesized by the sol-gel method and used for the growth of ZnO nanorods. The synthesized nanoparticles were studied by x-ray diffraction (XRD) and Raman spectroscopic techniques. Furthermore, these nanoparticles were used as the seed layer for the growth of ZnO nanorods by following the hydrothermal growth method. The structural study of ZnO nanorods was carried out by means of field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and XRD techniques. This study demonstrated that the grown ZnO nanorods are well aligned, uniform, of good crystal quality and have diameters of less than 200 nm. Energy dispersive x-ray (EDX) analysis revealed that the ZnO nanorods are composed only of zinc, cerium as the seed atom, and oxygen atoms, with no other impurities in the grown nanorods. Moreover, a photoluminescence (PL) approach was applied for the optical characterization, and it was observed that the near-band-edge (NBE) emission was the same as that of the zinc acetate seed layer, however the green and orange/red emission peaks were slightly raised due to possibly higher levels of defects in the cerium oxide seeded ZnO nanorods. This study provides an alternative approach for the controlled synthesis of ZnO nanorods using cerium oxide nanoparticles as the seed nucleation layer, improving both the morphology of the nanorods and the performance of devices based upon them.
Growth of Long ZnO Nanowires with High Density on the ZnO Surface for Gas Sensors
ACS Applied Nano Materials, 2019
Among the various approaches to grow semiconducting oxide nanowires, the thermal oxidation procedure is considered a simple, efficient, and fast method that allows the synthesis of micro and nanostructured arrangements with controlled size and morphology. In the work reported in this paper, long ZnO nanowires were synthesized on the surface of oxidized high-purity Zn foils by heating in air at different rates and temperatures. The size and morphology investigated by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) for a sample heated at 620°C with heating rate of 20°C/min reveal the growth of long ZnO nanowires with length of ∼50 μm and average diameter of 74 nm grown along the ⟨112̅ 0⟩ direction with high population density. Results with different heating rates indicates that this parameter is determinant in tuning the size, morphology, and population density of nanowires. X-ray diffraction (XRD) shows patterns for both ZnO and metallic Zn with preferential orientation, whereas perturbed angular correlation (PAC) measurements using 111 In(111 Cd) probe nuclei indicate that probe nuclei occupy only Zn sites in the preferential oriented metallic zinc. However, for samples submitted to high-temperature heating (820 and 1000°C), XRD yields only the ZnO pattern and, amazingly, PAC continues showing probe nuclei only at metallic Zn sites indicating the presence of thin regions of highly oriented Zn trapped between grains of ZnO. Moreover, this strong preference of indium atoms (of parent radioactive 111 In) here revealed helps to understand the oxidation mechanism and the growth of the nanowires.