Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs (original) (raw)
2015, Journal of Alloys and Compounds
Al 0.26 Ga 0.73 N/GaN/Si HEMTs with and without SiO 2 /SiN passivation, were characterized by Deep Level Transient Spectroscopy (DLTS), Capacitance-Voltage (CeV) and Current-Voltage (IeV) measurements to understand the electronic traps in AlGaN/GaN/Si HEMTs and to make a comparative study before and after passivation. Three Deep-level electron traps were observed in our sample with an activation energy 0.054 eV, 0.31 eV and 0.49 eV. The localization and the identification of these traps are reported.
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