Surface treatment of 4H-SiC MOSFETs prior to Al 2 O 3 deposition (original) (raw)

ICSCRM2019 Organizing Committee, 2019

Abstract

The effect of surface treatments prior to the deposition of Al2O3is performed on 4H-SiC MOS capacitors and MOSFETs. 40 nm of Al2O3were deposited on 4H-SiC using atomic layer deposition (ALD) as a gate dielectric. Different surface treatments were used to investigate the capacitance-voltage and current-voltage characteristics on MOS capacitors and MOSFETs respectively, including the important parameters such as interface state density, flat band voltage, threshold voltage and field-effect mobility. Forming gas annealing and rapid oxidation processes were found to be effective in reducing the interface state density and results in high field-effect mobility with peak field-effect mobility of 130 cm2Vs-1. The experimental results obtained manifest that the surface treatment prior to Al2O3deposition is critical to producing high performance of 4H-SiC MOSFETs.

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