In-situ TEM Analyses over FIB Lamellae - Investigating High Temperature Conversion of Solution Processed Mo-precursor to MoS2 Semiconductor Films (original) (raw)

This research explores a novel liquid phase synthesis approach for the production of MoS2 thin films through the chemical conversion of Mo-precursor films at high temperatures. The study emphasizes the significance of high annealing temperatures for improving the crystallinity of MoS2 films, highlighting in-situ analyses using TEM to observe layer uniformity and sulfur cluster formation at various temperatures. The findings suggest that this method offers scalability and controllable film thickness, with potential applications in electronic devices such as transistors, photovoltaic cells, and sensors.