Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas (original) (raw)
Abstract
We developed advanced techniques for the growth of selfassembled quantum dots (QDs) for fabricating a broadband light source that can be applied to optical coherence tomography (OCT). Four QD ensembles and strain reducing layers (SRLs) were grown in selective areas on a wafer by the use of a 90 • rotational metal mask. The SRL thickness was varied to achieve appropriate shifts in the peak wavelength of the QD emission spectrum of up to 120 nm. The four-color QD ensembles were expected to have a broad bandwidth of more than 160 nm due to the combination of excited state emissions when introduced in a current-induced broadband light source such as a superluminescent diode (SLD). Furthermore, a desired shape of the SLD spectrum can be obtained by controlling the injection current applied to each QD ensemble. The broadband and spectrum shape controlled light source is promising for high-resolution and low-noise OCT systems.
Loading Preview
Sorry, preview is currently unavailable. You can download the paper by clicking the button above.
References (13)
- Nadya Anscombe, "Join up the quantum dots," Nat. Photon., vol.1, no.7, pp.360-361, 2007.
- Innolume GmbH, http://www.innolume.com/
- D. Leonardo, M. Krishnamurthy, C.M. Reaves, and P. Petroff, "Di- rect formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces," Appl. Phys. Lett., vol.63 pp.3203- 3205, 1993.
- K. Asakawa, Y. Sugimoto, Y. Watanabe, N. Ozaki, A. Mizutani, Y. Takata, Y. Kitagawa, H. Ishikawa, N. Ikeda, K. Awazu, X. Wang, A. Watanabe, S. Nakamura, S. Ohkouchi, K. Inoue, M. Kristensen, O. Sigmund, P.I. Borel, and R. Baets, "Photonic crystal and quan- tum dot technologies for all-optical switch and logic device," New J. Phys., vol.8, no.208, pp.1-29, 2006.
- N. Ozaki, S. Ohkouchi, Y. Takata, N. Ikeda, Y. Watanabe, Y. Sugimoto, and K. Asakawa, "Monolithic fabrication of two-color InAs quantum Dots for Integrated optical devices by using a rota- tional metal mask," Jpn. J. Appl. Phys., vol.48, no.6, 065502, 2009.
- N. Ozaki, K. Takeuchi, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, and R.A. Hogg, "Multi-color quantum dot ensem- bles grown in selective-areas for shape-controlled broadband light source," J. Cryst. Growth, vol.323, pp.191-193, 2011.
- C. Ackay, P. Parrein, and J.P. Rolland, "Estimation of longitudi- nal resolution in optical coherence imaging," Appl. Opt., vol.41, pp.5256-5262, 2002.
- Z.Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z.G. Wang, "Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum," Optical Quant. Electron., vol.31, pp.1235-1246, 1999.
- M. Rossetti, L.H. Li, A. Fiore, L. Occhi, and C. Vlez, Quantum dot superluminescent diodes, in Handbook of Self Assembled Semicon- ductor Nanostructures for Novel Devices in Photonics and Electron- ics, M. Henini ed., pp.565-599, Elsevier, 2008.
- Z.Y. Zhang, R.A. Hogg, X.Q. Lv, and Z.G. Wang, "Self-assembled quantum-dot superluminescent light-emitting diodes," Adv. Opt. Photon., vol.2, pp.201-228, 2010.
- N. Ozaki, Y. Takata, S. Ohkouchi, Y. Sugimoto, Y. Nakamura, N. Ikeda, and K. Asakawa, "Selective area growth of InAs quantum dots with a Metal Mask towards optical integrated circuit devices," J. Cryst. Growth, vol.301-302, pp.771-775, 2007.
- K. Nishi, H. Saito, S. Sugo, and J.S. Lee, "A narrow photolumi- nescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates," Appl. Phys. Lett., vol.74, pp.1111-1113, 1999.
- N. Ozaki, S. Ohkouchi, Y. Sugimoto, N. Ikeda, and K. Asakawa, "Area-selective and site-controlled InAs quantum-dot growth tech- niques for photonic crystal-based ultra-small integrated circuit," Ch.13(pp.405-420) of "Self-assembled quantum dots," Lect. Notes Nanoscale Science and Technology series vol.1, Springer, 2008.