Site-controlled self-organization of InAs quantum dots (original) (raw)

Materials Science and Engineering: B, 2002

Abstract

In situ site-control techniques for self-organized InAs quantum dots (QDs) have been developed using an electron beam (EB) and a scanning tunneling microscope (STM) probe combined with molecular beam epitaxy. In the in situ EB-assisted process, InAs dots are preferentially formed in shallow, sub-μm-size GaAs holes with the InAs supply. We find that the specific slope of a hole acts

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