InAs quantum-dot laser utilizing GaAs photonic-crystal line-defect waveguide (original) (raw)
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Linewidth Study of InAs–InGaAs Quantum Dot Distributed Feedback Lasers
IEEE Photonics Technology Letters, 2004
The linewidth of laterally loss-coupled distributed feedback (DFB) lasers based on InAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) is investigated. Narrow linewidth operation of QD devices is demonstrated. A linewidth-power product less than 1.2 MHz mW is achieved in a device of 300-m cavity length for an output power up to 2 mW. Depending on the gain offset of the DFB modes from the QD ground state gain peak, linewidth rebroadening or a floor is observed at a cavity photon density of about 1 2 2 4 10 15 cm 3 , which is much lower than in QW lasers. This phenomenon is attributed to the enhanced gain compression observed in QDs.
2007 9th International Conference on Transparent Optical Networks, 2007
The coupling between single 1.3 ptm InAs quantum dots (QDs) and photonic crystal nanocavities with quality factors Q up to 15000 is showed. In this condition the Purcell effect (increased spontaneous emission rate) is observed for the first time at these wavelengths. This result is an important step for the development of semiconductor based single photon sources at telecom wavelength, a fundamental need for application like quantum cryptography and quantum computing.
Designing a low-threshold quantum-dot laser based on a slow-light photonic crystal waveguide
Applied optics, 2017
We numerically investigate and design a compact electrically pumped edge-emitting photonic crystal waveguide (PCW) quantum dot (QD) laser operating at room temperature. Use of a narrowband folded directional coupler as the output mirror has made the proposed structure an edge-emitting single-mode laser. Moreover, we propose a set of rate equations to model the performance of the PCW-QD laser. In the proposed model, we take the effects of the homogeneous and inhomogeneous broadenings and the slow-light effects on the modal gain and loss coefficient into account. Simulations show that threshold current as low as ∼26 μA can be achieved for the PCW-QD laser with a 50-μm-long cavity and output power in the range of micro-watts. The proposed low-threshold edge-emitting PCW-QD laser is a promising light source for the off-chip and on-chip photonic network applications.
… , 2007. ICTON'07. …, 2007
The coupling between single 1.3 ptm InAs quantum dots (QDs) and photonic crystal nanocavities with quality factors Q up to 15000 is showed. In this condition the Purcell effect (increased spontaneous emission rate) is observed for the first time at these wavelengths. This result is an important step for the development of semiconductor based single photon sources at telecom wavelength, a fundamental need for application like quantum cryptography and quantum computing.
Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP
Journal of Lightwave Technology, 1999
Room temperature lasing from optically pumped single defects in a two-dimensional (2-D) photonic bandgap (PBG) crystal is demonstrated. The high-Q optical microcavities are formed by etching a triangular array of air holes into a halfwavelength thick multiquantum-well waveguide. Defects in the 2-D photonic crystal are used to support highly localized optical modes with volumes ranging from 2 to 3 (/2n) 3. Lithographic tuning of the air hole radius and the lattice spacing are used to match the cavity wavelength to the quantum-well gain peak, as well as to increase the cavity Q. The defect lasers were pumped with 10-30 ns pulses of 0.4 01% duty cycle. The threshold pump power was 1.5 mW (500 W absorbed).
Quantum dot photonic devices for lightwave communication
Applied Physics A, 2005
For InAs-GaAs based Quantum Dot Lasers emitting at 1300 nm digital modulation showing an open eye pattern up to 12 Gb/s at room temperature is demonstrated, at 10 Gb/s the bit error rate is below 10 K12 at K2 dBm receiver power. Cutoff frequencies up to 20 GHz are realised for lasers emitting at 1.1 mm. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 mm, improving coupling efficiency into fibers. No beam filamentation of the fundamental mode, low a-factors and strongly reduced sensitivity to optical feedback is observed. QD lasers are thus superior to QW lasers for any system or network. Quantum dot semiconductor optical amplifiers (QD SOAs) demonstrate gain recovery times of 120-140 fs, 4-7 times faster than bulk/QW SOAs, and a net gain larger than 0.4 dB/(mm!QD layer) providing us with novel types of booster amplifiers and Mach-Zehnder interferometers. These breakthroughs became possible due to systematic development of self-organized growth technologies.
Distributed feedback-like laser emission in photonic crystal waveguides on InP substrate
IEEE Journal of Selected Topics in Quantum Electronics, 2000
Lasing of triangular and square lattice photonic crystal, waveguides on InP substrate is investigated around the 1.5-µm wavelength by optical pumping. The lattice period of the fabricated structures is varied over a very large scale, thereby allowing a detailed exploration of the laser behaviors in the cases of micrometer width waveguides. A genuine distributed feedback (DFB) laser emission is observed in the gap for W2-3 waveguides in the ΓM direction of a triangular lattice. A different behavior is obtained for W3 waveguides in the ΓK direction of the same lattice as well as for W1 and W3 waveguides in the ΓX direction of a square lattice. The laser emission is found to occur at the Γ point of the Brillouin zone (wavevector k = 0) when the emission frequency is outside the gap. The DFB-like laser emission is intrinsically single mode in this case. Plane wave calculations show that the field distributions of the two DFB components are radically different. The emitting mode is well localized in the guide core while the non-lasing mode spreads over the whole crystal.
Nanotechnology, 2009
We propose a photonic molecule consisting of multiple nanocavities in a photonic crystal and demonstrate its lasing and modal characteristics by finite-difference time-domain analysis and by experiments. In the analysis, we show that a point-shift defect and a point-missing defect have sand p-orbital cavity modes, respectively, and that two adjacent defects exhibitand-orbital bonding and antibonding modes, which are similar to electronic states in chemical molecules. For such structure, we verify the modal characteristics as photonic molecules, i.e., mode splitting and its dependence on coupling strength, through their fabrication into GaInAsP photonic crystal slabs and the observation of lasing characteristics.
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
IEEE Photonics Technology Letters, 2000
Amplified spontaneous emission measurements are investigated below threshold in InAs quantum-dot lasers emitting at 1.22 m. The dot layer of the laser was grown in a strained quantum well (QW) on a GaAs substrate. Ground state gain is determined from cavity mode Fabry-Perot modulation. As the injection current increases, the gain rises super-linearly while changes in the index of refraction decrease. Below the onset of gain saturation, the linewidth enhancement factor is as small as 0.1, which is significantly lower than that reported for QW lasers.