Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels (original) (raw)
2018, IEEE Transactions on Nuclear Science
AI-generated Abstract
This paper presents a comprehensive comparison of the radiation hardness of various CMOS Image Sensor (CIS) technologies when subjected to high total ionizing doses (TID). Through detailed experimentation, the study evaluates different design configurations, focusing on the influence of gate overlap structures on performance and dark current. The findings indicate that specific designs, particularly those optimizing gate overlap, demonstrate improved resilience against radiation effects, highlighting the importance of innovative designs for applications in high-radiation environments.
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