A novel dual-gate nano-scale InGaAs transistor with modified substrate geometry (original) (raw)

2017 International Conference on Innovations in Electronics, Signal Processing and Communication (IESC)

Abstract

Structures based on Indium Gallium Arsenide (InGaAs) have attracted a lot of interest in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) technology recently. In this paper, a new nano-scale dual-gate MOSFET using Ino.75 Gao.25As is proposed. Multiple designs were simulated with different doping concentration in the source/drain region and the channel stop region to get an excellent Ion/Iqff. Since current in Metal-Oxide-Semiconductor (MOS) depends on the doping profile of the channel, a careful re-engineering of the channel would improve the MOSFET characteristics. Channel length, Lg of the proposed device is 20 nm which produces a significant amplification and supports large current due to wide channel interaction. Simulation of Ino.75 Gao.25 As MOSFET with Lg = 20 nm, gate-oxide thickness toxGate1 = toxGate2 = 2nm and a width Z = 1000nm, exhibits transconductance gm_max ≈ 293.626 μS/μm, subthreshold slope SS ≈ 70 mV/decade and drain-induced-barrier-lowering DIBL = 41.66 mV/V.

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