Structure and Composition of TiVN Thin Films Deposited by Reactive DC Magnetron Co-sputtering (original) (raw)
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Paper, 2017
Mechanical properties of titanium nitride films obtained by reactively sputtering with hot target R V Babinova, V V Smirnov, A S Useenov et al.-Influence of technological parameters on the mechanical properties of titanium nitride films deposited by hot target reactive sputtering A A Kozin, V I Shapovalov, V V Smirnov et al.-Properties of Titanium Nitride Films for Abstract. Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO 2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.
Thin Solid Films, 1996
Titanium atuminium nitride thin films have been deposited on glass slides using a dual unbalanced d.c, magnetmn sputter arrangement with separate titanium and aluminium targets, A range of TilAIIN compositions were produced by varying the aluminiton target magnetron current. The thin films were then examined using an utomic fo~ce microscope (AFM) and a field emission scanning electron microscope. Alumininm, titanium and nitrogen compnsitions (wt.%) were determined by using energy dispersive X-my spectroscopy. It was found that as the aluminium msgnetron cut-cent increased from 0.l to 0A A, the titanium decreased from 77 wt.% to 53 wt,%, the aluminium increased from 6 wt,% to 25 wi,% and the colom" chtmged from gold to a blue-grey. An increase in the aluminium content had a significant effect on the grain size of the film. Surface measurement analysis using the AF'M results revealed that as the aluminium content increased both the rms roughness (6.5 nm ~ 3.2 am) and groin size (120 am-* 90 nm) decreased. It is believed that the above effects could result from the increase in aluminium atom bombardment rate with the higher aluminium magnetron current.
Properties of titanium nitride films prepared by direct current magnetron sputtering
Materials Science and Engineering: A, 2007
Titanium nitride (TiN) thin films of different thickness were deposited by direct current (dc) magnetron sputtering under conditions of various N 2 concentrations (0.5-34%). The electrical, optical, structural, compositional and morphological properties of the films were studied and the results were discussed with respect to N 2 concentration and thickness of the films. At low N 2 concentration of 0.5% (of the total sputtering pressure 1.1 Pa), golden coloured stoichiometric TiN films were obtained and with increase in the N 2 concentration non-stoichiometric TiN x phases resulted. However, irrespective of the N 2 concentration, the TiN stoichiometry in the films increased with increase in the film thickness. In the surface of the films the presence of nitride (TiN), oxynitride (TiO x N y ) and oxide (TiO 2 ) phases were observed and the quantity of these phases varied with the N 2 concentration and thickness. The films of lower thickness were found to be amorphous and the crystallinity was observed in the films with increase in the thickness. The crystalline films showed reflections corresponding to the (1 1 1), (2 0 0) and (2 2 0) orientation of the cubic TiN and also features associated with TiN x phases. The transmission spectra of the films revealed the typical characteristics of the TiN films i.e. a narrow transmission band, however, the width varied with thickness, in the wavelength range of 300-600 nm and exhibited low transmission in the infrared region. The TiN films deposited at low N 2 concentration of 0.5% showed smooth and uniform morphology with densely packed crystallites. With increase in N 2 concentration various characteristics such as needle type crystallization, bubble precipitates and after bubble burst morphologies were observed in the films. However, at higher N 2 concentration conditions, uniformity developed in the films with increase in thickness.
Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering
Journal of Physics: Conference Series, 2017
Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO 2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.
2014
""TixAl1-xN coatings were grown using the triode magnetron sputtering technique varying the bias voltage between -40 V and -150V. The influence of bias voltage on structural and morphological properties was analyzed by means of energy dispersive spectroscopy, x-ray diffraction and atomic force microscopy techniques. As the bias voltage increased, an increase in the Al atomic percentage was observed competing with Ti and producing structural changes. At low Al concentrations, the film presented a FCC crystalline structure; nevertheless, as Al was increased, the structure presented a mix of FCC and HCP phases. On the other hand, an increase in bias voltage produced a decrease films thickness due to an increase in collisions. Moreover, the grain size and roughness were also strongly influenced by bias voltage. PACS:61.05.cp""
The effect of substrate orientation and ion bombardment during the growth on the structure and properties of TiN films deposited by reactive unbalanced magnetron sputtering has been reported. Films deposited at a nitrogen partial pressure of 5×10–5 mbar and a current density of 2.50 mA cm–2 were golden yellow in color, characteristic of stoichiometric TiN. The effect of Si(100) and Si(111) substrates on the TiN film along with the substrate bias has been investigated. With an increase in the substrate bias on Si(111) substrate, TiN(111) is the most preferred orientation. On a Si(100) substrate with an increase in the substrate bias, TiN(220) orientation has been observed. The influence of the substrate on the growth of TiN films has been explained in terms of surface energy. The variation of grain size, resistivity, and the internal stress of TiN films as the function of substrate bias have also been investigated
Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering
Materials Science-Poland, 2015
In this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN) thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100) wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K) in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM) and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K) to 2.66 (at 673 K) and then decreased to 2.33 (at 773 K). The fractal anal...
Thin Solid Films, 2011
Nanocrystalline aluminium titanium nitride (AlTi 3 N) thin films were deposited on Si (100) wafer and grid substrates without external heating and biasing at room temperature by reactive unbalanced magnetron cosputtering technique using pure individual titanium and aluminium targets. The effects of titanium current (I Ti) on the structure and hardness of these films have been studied. The films were sputtered with Ar and N 2 gases flow rate of 8 and 4 sccm, respectively. The sputtering current of the aluminium current (I Al) was kept at 600 mA and the sputtering current of titanium (I Ti) was varied from 600 to 800 mA. The films were deposited for different deposition times ranging from 15 to 60 min. The deposited films were then characterized and analyzed by X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and nanoindentation measurement. The results indicated that the modification of the crystal structure, surface morphology and microstructure were dependent on the deposition parameters. The XRD patterns show polycrystalline structure with preferred orientations in (112), (004) and (153) planes which agree with the standard structure of aluminium titanium nitride (AlTi 3 N) films. In addition, the structure of AlTi 3 N was also confirmed by TEM. These results show that the films are composed of high Al content. The root mean square surface roughness and the average thicknesses were strongly influenced by I ti and deposition times. Cross section analysis by SEM showed dense and compact columnar morphology. The typical hardness of the films was approximately 26.24-30.37 GPa.
Deposition of thin films by reactive magnetron sputtering is a very suitable method for the surface protection of materials Titanium nitride thin film coatings provido very good protection to materials from wear and tear, corrosion oxidation etc Thin films of titanium nitride deposited by reactive magnetron sputtering in argon/nitrogen gaseous mixture acts as hard protective coating and also prevent the bell metal substrate from reacting with the environment and getting oxidized An investigation on the hardness of titanium nitride films deposited by reactive magnetron sputtering has been carried out by the method of nano indentation and an analysis of the films for different deposition conditions is presented The TiN film hardness is found to increase 13 times at 50% nitrogen in the gaseous mixture
Vacuum, 2010
Titanium nitride and titanium oxynitride films were deposited by varying the plasma current density from 10 mA/cm 2 to 40 mA/cm 2 using DC magnetron sputtering at constant gas flow rate and deposition time. Samples were characterized by Grazing Incidence X-Ray Diffraction, XPS, Nanoindentation and colorimetric analysis. Different coloured films like golden, blue, pink and green were obtained at different current densities. At lower current density (10 mA/cm 2 ), golden coloured stoichiometric titanium nitride film was formed. At higher current densities (20, 30 and 40 mA/cm 2 ), non stoichiometric Titanium oxynitride films of colour blue, pink and green were formed respectively. The thickness of the films increased with plasma current density from 43 nm to 117 nm. It was found that the colour variation was not only due to thickness of the film but also due to oxygen atoms replacing the nitrogen positions in TiN lattice. Hardness and Young Modulus of the films were found to decrease from 17.49 GPa to 7.05 GPa and 319.58 GPa-246.77 GPa respectively with increasing plasma current density. This variation of hardness and Young Modulus of the films can be speculated due to change in crystal orientation caused by oxygen incorporation in the films. The film resistivity increased from 16.46 Â 10 À4 to 3.28 Â 10 À1 U cm for increasing plasma current density caused due to oxygen incorporation in the crystal lattice.