High-Voltage Schottky Barrier Diode on Silicon Substrate (original) (raw)
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Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Semiconductor Science and Technology, 2011
Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 m cm 2 and a maximum breakdown voltage of 600 V, resulting in a figure-ofmerit of 275 MW cm −2 . An ultra-low reverse leakage current density of 3.7 × 10 −4 A cm −2 at reverse bias of 400 V was observed. Temperature-dependent I-V measurements were also carried out to study the forward and reverse transportation mechanisms.
Microelectronic Engineering, 2007
In this paper, we report the breakdown voltage (BV) of AlGaN/GaN based Schottky diodes with field plate edge termination. Simulation and fabrication of AlGaN/GaN Schottky diodes were carried out. The simulations were performed using the commercial 2-D device simulator DESSIS. From the simulations, it is found that for a given gate-Ohmic distance (L gd) of 10 lm, 2DEG of 1 • 10 13 cm À2 and field plate length (L FP) of 2.5 lm, highest BV can be obtained for a silicon nitride thickness of 8000 Å and this BV value is more than 5 times that for a Schottky diode without field plate. The breakdown voltages were also simulated for different field plate lengths. The BV values obtained on the fabricated Schottky diodes are compared with the simulation data and the experimental results follow the trend obtained from the simulation. Simulations were also carried out on a Schottky diode with field plate placed over a stepped insulator with L gd = 10 lm, L FP = 5 lm and 2DEG = 1 • 10 13 cm À2 and the obtained BV values are about 7 times that without field plate.
2012
This paper describes a GaN-on-Si Schottky process technology being developed in one of NXP’s standard Si production fabs. It runs alongside standard Si-component manufacturing sharing the same production tools. It supports up to 900V-rated Schottky barrier diodes and power switches. Up to 8A-rated diodes and 100mΩ switches with breakdown voltage above 1000V are demonstrated. INTRODUCTION AND MOTIVATION Future high-efficiency power converters require fast switching, low conduction loss devices that can handle high voltages. GaN is a good candidate for voltages up to 1kV and shows excellent switching behavior in Schottky diodes and in HEMTs. Thanks to the advancements in GaN-on-Si epitaxy, the industry is now actively combining III-V specific device expertise with low-cost high-volume Si main-stream production facilities. Key issues to be resolved in GaN Schottky diodes and HEMTs are the reduction of leakage current, lagging behavior (dynamic Ron or current collapse) and optimization ...
Materials Science Forum, 2013
In this work, we studied the effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts on N-GaN/SiC/Si substrates, looking at parameters such as on-resistance, reverse leakage, and contact barrier height. Ti, Ni and Mo were sputtered to form the contacts, and we characterized the I-V curves with the different substrate temperatures during the sputtering as shown in Figure 1. For the Ti Schottky contact, the substrate temperature of 100oC during the sputtering demonstrates the minimum series resistance with Rs about 0.04cm2, while temperatures greater than 3000C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this contact. Results for sputtered Ni contacts using different substrate temperatures will also be presented, as well as the effect of Ar sputter cleaning before contact deposition.
Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers
IEEE Transactions on Electron Devices, 2011
A study of the reverse-leakage-current mechanisms in metal-organic-chemical-vapor-deposition (MOCVD)-grown GaN Schottky-barrier diodes is presented. An analysis is carried out of the characteristics of GaN Schottky diodes as well as of diodes with an InGaN surface layer to suppress the reverse leakage current and increase the breakdown voltage. The experimental results of the diodes with InGaN surface layers showed a ~ 40-V breakdown voltage increase and a significant leakage-current reduction under high reverse bias, in comparison with the design with GaN only. Such improvements are attributed to the reduced surface electric field and the increased electron tunneling distance induced by the polarization charges at the InGaN/GaN interface. We also report the effect of a high-pressure (near atmospheric pressure) MOCVD growth technique of the GaN buffer layer to further improve the leakage current and breakdown voltage.
Japanese Journal of Applied Physics, 2006
We have proposed and fabricated a lateral GaN Schottky barrier diode (SBD) that increases the breakdown voltage and decreases the leakage current by the oxidation of a Ni/Au Schottky contact. After an oxidation, the anode current was increased under a high anode bias, whereas the turn-on voltage was slightly increased. The leakage current was considerably decreased to less than 1 nA after the oxidations of 5 and 10 min. A high breakdown voltage of 750 V was measured in the proposed GaN SBD when multiple floating metal rings (FMRs) were used for edge termination and oxidation was employed. We have also measured the reverse recovery waveforms at room temperature and 125 C and the fabricated GaN SBDs show very fast reverse recovery characteristics.
Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode
Thin Solid Films, 2013
Electrical and deep level defects have been investigated in GaN Schottky barrier diode (SBD) in the temperature ranging from 125 K to 425 K. The study was carried out by combined current density-voltage (J-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) characterization techniques. It is found that the ideality factor n of the diode decreases and the corresponding Schottky barrier height (SBH) increases with increasing temperature, which indicates the barrier in-homogeneity at metal/semiconductor interface. Thermionic emission with Gaussian distribution of SBHs is thought to be responsible for the electrical behavior of the diode over the temperature region. The possible explanation for this discrepancy in the estimated SBHs from J-V and C-V is presented. The DLTS measurement has revealed two deep level traps in GaN with activation energies E c − 0.23 eV and E c − 0.45 eV having different capture cross-sections. In addition, we observed that the reverse leakage current in GaN SBD above 275 K is due to Frenkel-Poole emission (FPE). The estimated emission barrier height by FPE model is about~0.25 eV. Hence, the reverse leakage current is due to the emission of electrons from the trap state near the metal-semiconductor interface into a continuum of states, associated with conductive dislocations.
A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time
physica status solidi (c), 2012
Lateral AlGaN/GaN Schottky barrier diodes on silicon (111) substrate have been fabricated and characterized. The Hall measurement shows the mobility of 1430 cm 2 /V-s with a sheet carrier density of 9.8 × 10 12 cm-2 for the AlGaN/GaN structure. The specific on-state resistance (R on) is 1.27 mΩ-cm 2 , while the forward turn-on voltage is 1.43 V at the current density of 100 A/cm 2 for device with Schottky-to-ohmic distance of 10 μm. The measured reverse breakdown voltage (V B) at room temperature is up to 600 V without edge termination. The figure-of-merit, (V B) 2 /R on , is 302.7 MWcm-2 , and fast reverse recovery time is observed for device switched from a forward current density of 720 A/cm 2 to a reverse bias of 30 V with di/dt of 60 A/μs.
IEEE Transactions on Electron Devices, 2016
In this paper, a further leakage reduction of AlGaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) has been achieved by optimizing the physical vapor deposited TiN as the anode metal without severe degradation of ON-state characteristics. The optimized GET-SBD multifinger power diodes with 10 mm anode width deliver ∼4 A at 2 V and show a median leakage of 1.3 µA at 25°C and 3.8 µA at 150°C measured at a reverse voltage of −200 V. The temperature-dependent leakage of Si, SiC, and our GaN power diodes has been compared. The breakdown voltage (BV) of GET-SBDs was evaluated by the variation of anode-to-cathode spacing (L AC) and the length of field plate. We observed a saturated BV of ∼600 V for the GET-SBDs with L AC larger than 5 µm. The GET-SBD breakdown mechanism is shown to be determined by the parasitic vertical leakage current through the 2.8 µm-thick buffer layers measured with a grounding substrate. Furthermore, we show that the forward voltage of GET-SBDs can be improved by shrinking the lateral dimension of the edge termination due to reduced series resistance. The leakage current shows no dependence on the layout dimension L G (from 2 to 0.75 µm) and remains at a value of ∼10 nA/mm. The optimized Au-free GET-SBD with low leakage current and improved forward voltage competes with high-performance lateral AlGaN/GaN SBDs reported in the literature.