SiC Nanowires : from growth to related devices (original) (raw)

Low dimensional semiconductor nanostructures, such as nanowires (NWs), have become the focus of intensive research for exploring new emergent phenomena at the nanoscale and probing their possible use in future electronics. Among these semiconductor NWs, Silicon Carbide (SiC) has very unique properties, such as wide bandgap, excellent thermal conductivity, chemical and physical stability, high electron mobility and biocompatibility. These factors makes SiC a long standing candidate material to replace silicon in specific electronic device applications operating in extreme conditions or/and harsh environments. SiC nanostructures have been studied extensively and intensively over the last decade not only for their fabrication and characterization, but also for their diverse applications. I have outlined the growth of SiC nanostructures based on different growth methods, a noteworthy feature of their characteristic properties and potential applications in the chapter one. As-grown SiC N...