Tuning of transport properties of the double-step chemical bath deposition grown zinc oxide (ZnO) nanowires by controlled annealing: An approach to generate p-type ZnO nanowires (original) (raw)
ZnO nanowires/p-Si heterojunction diodes are fabricated by employing low temperature double-step chemical bath deposition technique. The grown samples are initially annealed at different temperatures in the range of 300°C to 600°C at 10 psi argon atmosphere for 30 min. Field emission scanning electron microscope images confirmed the growth of vertically oriented ZnO nanowires with average nanowire diameter and height of 183-190 nm and~1.4 μm, respectively. The x-ray diffraction study shows that the samples are poly-crystalline with hexagonal wurtzite structure and ZnO nanowires are vertically c-axis oriented. The photoluminescence study indicates the presence of oxygen vacancy in as-grown and 300°C annealed sample, whereas, the 500°C annealed ZnO nanowires show the existence of oxygen interstitials. Heterojunction diodes are fabricated on the as-grown, 300°C, 400°C, 450°C, 460°C, 475°C, 490°C, 500°C, 550°C and 600°C annealed nanowires for the measurements of current-voltage and capacitance-voltage characteristics. Both the results indicate an electron dominated transport for the as-grown to 490°C samples and hole transport for ≥500°C annealed sample. The acceptor or p-type dopant formation temperature is observed to be 500°C, which shows an effective acceptor concentration of 1.15 × 10 15 cm −3 (at 10 kHz) and 1.74 × 10 15 cm −3 (at 1 MHz). Thus the work indicates a possible route for converting the n-type ZnO nanowires to p-type of nature.
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